Alessandro Cresti

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Marco PalaDPIA, University of Udine, ItalyVerified email at uniud.it
Blanca BielDpto. Física Atómica, Molecular y Nuclear, Universidad de GranadaVerified email at ugr.es
Jiang Cao (曹江)ETH ZurichVerified email at iis.ee.ethz.ch
Frank OrtmannTechnische Universität München, GermanyVerified email at tum.de
Alejandro Lopez-BezanillaStaff Scientist at Los Alamos Nat'l LabVerified email at lanl.gov
Vincent BOUCHIATResearch Director at Neel Institute, CNRS Grenoble, FranceVerified email at grenoble.cnrs.fr
Xinran WangProfessor, Nanjing UniversityVerified email at nju.edu.cn
Dinh Van TuanDepartment of Electrical and Computer Engineering, University of RochesterVerified email at ece.rochester.edu
Aron W. CummingsCatalan Institute of Nanoscience and Nanotechnology (ICN2)Verified email at icn2.cat
Jean-Marie Poumirolchargé de recherche, CEMES-CNRSVerified email at cemes.fr
Gianaurelio (Giovanni) CunibertiTU Dresden; https://ORCID.org/0000-0002-6574-7848Verified email at tu-dresden.de
Yann-Michel NiquetCEA/IRIG/MEM/L_SimVerified email at cea.fr
Prof. Charles G. SmithDepartment of Physics, University of CambridgeVerified email at cam.ac.uk
Rebeca Ribeiro-PalauCenter for Nanoscience and NanotechnologyVerified email at c2n.upsaclay.fr
Simon M.-M. DuboisResearch Associate @ Institute of Condensed Matter and Nanosciences, UCLouvain, BelgiumVerified email at uclouvain.be
Massimo MacucciUniversita` di Pisa, ItalyVerified email at mercurio.iet.unipi.it
Gianluca FioriUniversity of Pisa, ItalyVerified email at mercurio.iet.unipi.it
Hongjie DaiProfessor of chemistry, stanford universityVerified email at stanford.edu
Nicolas LeconteUniversity of SeoulVerified email at uos.ac.kr
P. OrdejonICN2 - Institut Català de Nanociència i NanotecnologiaVerified email at icn2.cat

Alessandro Cresti

Univ. Grenoble Alpes, CNRS, Grenoble INP, IMEP-LaHC, F-38000 Grenoble, France

Verified email at minatec.inpg.fr

Physics Nanoelectronics Quantum transport 2D Materials Numerical simulations


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Charge transport in disordered graphene-based low dimensional materials A Cresti, N Nemec, B Biel, G Niebler, F Triozon, G Cuniberti, S Roche Nano Research 1, 361-394, 2008	381	2008
Keldysh-Green function formalism for current profiles in mesoscopic systems A Cresti, R Farchioni, G Grosso, GP Parravicini Physical Review B 68 (7), 075306, 2003	147	2003
Valley-valve effect and even-odd chain parity in p− n graphene junctions A Cresti, G Grosso, GP Parravicini Physical Review B 77 (23), 233402, 2008	103	2008
Quantum transport in graphene nanoribbons: Effects of edge reconstruction and chemical reactivity SMM Dubois, A Lopez-Bezanilla, A Cresti, F Triozon, B Biel, JC Charlier, ... ACS nano 4 (4), 1971-1976, 2010	94	2010
Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics P Marconcini, A Cresti, F Triozon, G Fiori, B Biel, YM Niquet, M Macucci, ... ACS nano 6 (9), 7942-7947, 2012	81	2012
Broken symmetries, zero-energy modes, and quantum transport in disordered graphene: From supermetallic to insulating regimes A Cresti, F Ortmann, T Louvet, D Van Tuan, S Roche Physical review letters 110 (19), 196601, 2013	75	2013
Range and correlation effects in edge disordered graphene nanoribbons A Cresti, S Roche New Journal of Physics 11 (9), 095004, 2009	70	2009
Edge-disorder-dependent transport length scales in graphene nanoribbons: from Klein defects to the superlattice limit A Cresti, S Roche Physical Review B 79 (23), 233404, 2009	67	2009
Numerical study of electronic transport in gated graphene ribbons A Cresti, G Grosso, GP Parravicini Physical Review B 76 (20), 205433, 2007	62	2007
Charge, spin and valley Hall effects in disordered graphene A Cresti, BK Nikolić, JH García, S Roche arXiv preprint arXiv:1610.09917, 2016	61	2016
Magnetoresistance in disordered graphene: The role of pseudospin and dimensionality effects unraveled F Ortmann, A Cresti, G Montambaux, S Roche Europhysics Letters 94 (4), 47006, 2011	60	2011
Multiple quantum phases in graphene with enhanced spin-orbit coupling: From the quantum spin Hall regime to the spin Hall effect and a robust metallic state A Cresti, D Van Tuan, D Soriano, AW Cummings, S Roche Physical review letters 113 (24), 246603, 2014	53	2014
Edge magnetotransport fingerprints in disordered graphene nanoribbons JM Poumirol, A Cresti, S Roche, W Escoffier, M Goiran, X Wang, X Li, ... Physical Review B 82 (4), 041413, 2010	50	2010
Unveiling the magnetic structure of graphene nanoribbons R Ribeiro, JM Poumirol, A Cresti, W Escoffier, M Goiran, JM Broto, ... Physical review letters 107 (8), 086601, 2011	49	2011
Operation and design of van der Waals tunnel transistors: A 3-D quantum transport study J Cao, D Logoteta, S Özkaya, B Biel, A Cresti, MG Pala, D Esseni IEEE Transactions on Electron Devices 63 (11), 4388-4394, 2016	43	2016
Electronic states and magnetotransport in unipolar and bipolar graphene ribbons A Cresti, G Grosso, GP Parravicini Physical Review B 77 (11), 115408, 2008	42	2008
A comparative study of surface-roughness-induced variability in silicon nanowire and double-gate FETs A Cresti, MG Pala, S Poli, M Mouis, G Ghibaudo IEEE transactions on electron devices 58 (8), 2274-2281, 2011	40	2011
Theoretical imaging of current profiles in two-dimensional devices A Cresti, G Grosso, G Pastori Parravicini The European Physical Journal B-Condensed Matter and Complex Systems 53, 537-549, 2006	38	2006
Oxygen surface functionalization of graphene nanoribbons for transport gap engineering A Cresti, A Lopez-Bezanilla, P Ordejón, S Roche ACS nano 5 (11), 9271-9277, 2011	33	2011
TlP 5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility JH Yuan, A Cresti, KH Xue, YQ Song, HL Su, LH Li, NH Miao, ZM Sun, ... Journal of Materials Chemistry C 7 (3), 639-644, 2019	31	2019

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