Ajay Raman
Ajay Raman
Senior Member of Technical Staff, RF SiGe HBT Device Engineer, Global Foundries
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AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit
A Raman, S Dasgupta, S Rajan, JS Speck, UK Mishra
Japanese Journal of Applied Physics 47 (5R), 3359, 2008
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
G Koblmüller, RM Chu, A Raman, UK Mishra, JS Speck
Journal of Applied Physics 107 (4), 2010
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
X Liu, R Yeluri, J Kim, S Lal, A Raman, J Lu, M Laurent, C Lund, ...
Applied Physics Letters 103 (5), 2013
Experimental demonstration of III-nitride hot-electron transistor with GaN base
S Dasgupta, A Raman, JS Speck, UK Mishra
IEEE electron device letters 32 (9), 1212-1214, 2011
Estimation of hot electron relaxation time in GaN using hot electron transistors
S Dasgupta, J Lu, N Raman, C Hurni, G Gupta, JS Speck, UK Mishra
Applied Physics Express 6 (3), 034002, 2013
AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy
A Raman, CA Hurni, JS Speck, UK Mishra
physica status solidi (a) 209 (1), 216-220, 2012
Active attack prevention for secure integrated circuits using latchup sensitive diode circuit
V Jain, A Raman, ST Ventrone, JJ Ellis-Monaghan, SP Adusumilli, ...
US Patent 11,171,095, 2021
Transistor with multi-level self-aligned gate and source/drain terminals and methods
JA Kantarovsky, MD Levy, J Hwang, SP Adusumilli, A Raman
US Patent 11,646,351, 2023
Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications
S Sirohi, V Jain, A Raman, B Nukala, E Veeramani, JW Adkisson, ...
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications
A Raman, V Jain, E Veeramani, BW Lim, US Raghunathan, Y Ngu, ...
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
Active x-ray attack prevention device
V Jain, ST Ventrone, SP Adusumilli, JJ Ellis-Monaghan, A Raman
US Patent 11,121,097, 2021
Anti-tamper x-ray blocking package
JA Kantarovsky, V Jain, SP Adusumilli, A Raman, ST Ventrone, YT Ngu
US Patent 11,437,329, 2022
Low-Temperature Growth and Characterization of p-GaN and Graded p-InGaN layers by MOCVD for Photovoltaic Applications
M Laurent, A Raman, D Denninghoff, S Keller, U Mishra
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011
Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α= 0.97
S Dasgupta, A Raman, JS Speck, UK Mishra
68th Device Research Conference, 133-134, 2010
Silicon controlled rectifiers integrated into a heterojunction bipolar transistor process
R Mishra, V Jain, A Raman, RJ Gauthier
US Patent 10,727,327, 2020
Selective Silicon for Raised Extrinsic Base in PA Applications
P Dongmo, C Luce, V Jain, Q Liu, A Raman, J Adkisson
Electrochemical Society Meeting Abstracts aimes2018, 1049-1049, 2018
An Exploration of GaN-based Heterojunction Bipolar Transistors
A Raman
University of California, Santa Barbara, 2013
Regrown-emitter AlGaN/GaN Heterojunction Bipolar Transistors grown by Ammonia-Molecular Beam Epitaxy
A Raman, CS Hurni, JS Speck, UK Mishra
International Workshop on Nitride Semiconductors, 2010
AlGaN/GaN Heterojunction Bipolar Transistors grown by Ammonia-Molecular Beam Epitaxy
A Raman, CS Hurni, JS Speck, UK Mishra
IEEE Lester Eastman Conference on High Performance Devices, 2010
Demonstration and Room Temperature Electrical Characteristics of a Nitride Hot Electron Transistor with GaN Base of 10 nm
S Dasgupta, Nidhi, A Raman, JS Speck, UK Mishra
Electronic Materials Conference, 2010
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