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Ajay Raman
Ajay Raman
Senior Member of Technical Staff, RF SiGe HBT Device Engineer, Global Foundries
Verified email at globalfoundries.com
Title
Cited by
Cited by
Year
AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit
A Raman, S Dasgupta, S Rajan, JS Speck, UK Mishra
Japanese Journal of Applied Physics 47 (5R), 3359, 2008
922008
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
G Koblmüller, RM Chu, A Raman, UK Mishra, JS Speck
Journal of Applied Physics 107 (4), 2010
842010
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
X Liu, R Yeluri, J Kim, S Lal, A Raman, J Lu, M Laurent, C Lund, ...
Applied Physics Letters 103 (5), 2013
352013
Experimental demonstration of III-nitride hot-electron transistor with GaN base
S Dasgupta, A Raman, JS Speck, UK Mishra
IEEE electron device letters 32 (9), 1212-1214, 2011
302011
Estimation of hot electron relaxation time in GaN using hot electron transistors
S Dasgupta, J Lu, N Raman, C Hurni, G Gupta, JS Speck, UK Mishra
Applied Physics Express 6 (3), 034002, 2013
142013
AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy
A Raman, CA Hurni, JS Speck, UK Mishra
physica status solidi (a) 209 (1), 216-220, 2012
112012
Active attack prevention for secure integrated circuits using latchup sensitive diode circuit
V Jain, A Raman, ST Ventrone, JJ Ellis-Monaghan, SP Adusumilli, ...
US Patent 11,171,095, 2021
42021
Transistor with multi-level self-aligned gate and source/drain terminals and methods
JA Kantarovsky, MD Levy, J Hwang, SP Adusumilli, A Raman
US Patent 11,646,351, 2023
32023
Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications
S Sirohi, V Jain, A Raman, B Nukala, E Veeramani, JW Adkisson, ...
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
32018
Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications
A Raman, V Jain, E Veeramani, BW Lim, US Raghunathan, Y Ngu, ...
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
22021
Active x-ray attack prevention device
V Jain, ST Ventrone, SP Adusumilli, JJ Ellis-Monaghan, A Raman
US Patent 11,121,097, 2021
22021
Anti-tamper x-ray blocking package
JA Kantarovsky, V Jain, SP Adusumilli, A Raman, ST Ventrone, YT Ngu
US Patent 11,437,329, 2022
12022
Low-Temperature Growth and Characterization of p-GaN and Graded p-InGaN layers by MOCVD for Photovoltaic Applications
M Laurent, A Raman, D Denninghoff, S Keller, U Mishra
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011
12011
Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α= 0.97
S Dasgupta, A Raman, JS Speck, UK Mishra
68th Device Research Conference, 133-134, 2010
12010
Silicon controlled rectifiers integrated into a heterojunction bipolar transistor process
R Mishra, V Jain, A Raman, RJ Gauthier
US Patent 10,727,327, 2020
2020
Selective Silicon for Raised Extrinsic Base in PA Applications
P Dongmo, C Luce, V Jain, Q Liu, A Raman, J Adkisson
Electrochemical Society Meeting Abstracts aimes2018, 1049-1049, 2018
2018
An Exploration of GaN-based Heterojunction Bipolar Transistors
A Raman
University of California, Santa Barbara, 2013
2013
Regrown-emitter AlGaN/GaN Heterojunction Bipolar Transistors grown by Ammonia-Molecular Beam Epitaxy
A Raman, CS Hurni, JS Speck, UK Mishra
International Workshop on Nitride Semiconductors, 2010
2010
AlGaN/GaN Heterojunction Bipolar Transistors grown by Ammonia-Molecular Beam Epitaxy
A Raman, CS Hurni, JS Speck, UK Mishra
IEEE Lester Eastman Conference on High Performance Devices, 2010
2010
Demonstration and Room Temperature Electrical Characteristics of a Nitride Hot Electron Transistor with GaN Base of 10 nm
S Dasgupta, Nidhi, A Raman, JS Speck, UK Mishra
Electronic Materials Conference, 2010
2010
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