| 3D resistive RAM cell design for high-density storage class memory—a review B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang, T Wang, K Fröhlich, ... Science China Information Sciences 59, 1-21, 2016 | 73 | 2016 |
| Multi-channel nanowire devices for efficient power conversion L Nela, J Ma, C Erine, P Xiang, TH Shen, V Tileli, T Wang, K Cheng, ... Nature Electronics 4 (4), 284-290, 2021 | 57 | 2021 |
| Impact of fin width on tri-gate GaN MOSHEMTs J Ma, G Santoruvo, L Nela, T Wang, E Matioli IEEE Transactions on Electron Devices 66 (9), 4068-4074, 2019 | 28 | 2019 |
| 1100 V AlGaN/GaN MOSHEMTs with integrated tri-anode freewheeling diodes T Wang, J Ma, E Matioli IEEE Electron Device Letters 39 (7), 1038-1041, 2018 | 23 | 2018 |
| p-NiO junction termination extensions for GaN power devices RA Khadar, A Floriduz, T Wang, E Matioli Applied Physics Express 14 (7), 071006, 2021 | 8 | 2021 |
| Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate T Wang, Y Zong, L Nela, E Matioli IEEE Electron Device Letters, 2022 | 4 | 2022 |
| Beyond 8 THz displacement-field nano-switches for 5G and 6G communications MS Nikoo, T Wang, P Sohi, M Zhu, F Qaderi, RA Khadar, A Floriduz, ... 2021 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2021 | 4 | 2021 |
| Moving target detection algorithm research based on background subtraction method W Songlin, L Haodong, W Taifang, C Zhi 3rd International Conference on Multimedia Technology (ICMT-13), 1172-1179, 2013 | 3 | 2013 |
| LiNiO gate dielectric with tri-gate structure for high performance E-mode GaN transistors T Wang, MS Nikoo, L Nela, E Matioli 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 2 | 2021 |
| Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate T Wang, Y Zong, L Nela, E Matioli Applied Physics Letters 121 (5), 2022 | | 2022 |
| LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor T Wang EPFL, 2022 | | 2022 |
| p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices RA Khadar, A Floriduz, T Wang, C Erine, R van Erp, L Nela, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | | 2021 |
| Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide T Wang, L Nela, J Ma, E Matioli 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |
| Group ID U13020 MA Asencio Hurtado, U Choi, IO Elhagali, C Erine, A Floriduz, HC Gür, ... | | |
