Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ...
Physical Review Applied 16 (1), 014018, 2021
69 2021 Friedel oscillations in a Fermi liquid GE Simion, GF Giuliani
Physical Review B 72 (4), 045127, 2005
55 2005 Formation of helical domain walls in the fractional quantum Hall regime as a step toward realization of high-order non-Abelian excitations T Wu, Z Wan, A Kazakov, Y Wang, G Simion, J Liang, KW West, K Baldwin, ...
Physical Review B 97 (24), 245304, 2018
29 2018 Spin phase diagram of the A Wójs, G Simion, JJ Quinn
Physical Review B 75 (15), 155318, 2007
27 2007 A flexible 300 mm integrated Si MOS platform for electron-and hole-spin qubits exploration R Li, NID Stuyck, S Kubicek, J Jussot, BT Chan, FA Mohiyaddin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2020
24 2020 Magnetic field spectral crossings of Luttinger holes in quantum wells GE Simion, YB Lyanda-Geller
Physical Review B 90 (19), 195410, 2014
24 2014 The hierarchy of incompressible fractional quantum Hall states JJ Quinn, A Wójs, KS Yi, G Simion
Physics reports 481 (3-4), 29-81, 2009
24 2009 Many-body local fields theory of quasiparticle properties in a three-dimensional electron liquid GE Simion, GF Giuliani
Physical Review B 77 (3), 035131, 2008
23 2008 Mesoscopic transport in electrostatically defined spin-full channels in quantum Hall ferromagnets A Kazakov, G Simion, Y Lyanda-Geller, V Kolkovsky, Z Adamus, ...
Physical review letters 119 (4), 046803, 2017
22 2017 Multiphysics simulation & design of silicon quantum dot qubit devices FA Mohiyaddin, G Simion, NID Stuyck, R Li, F Ciubotaru, G Eneman, ...
2019 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2019
18 2019 Parafermions, induced edge states, and domain walls in fractional quantum Hall effect spin transitions J Liang, G Simion, Y Lyanda-Geller
Physical Review B 100 (7), 075155, 2019
15 2019 Electrostatic control of quantum Hall ferromagnetic transition: A step toward reconfigurable network of helical channels A Kazakov, G Simion, Y Lyanda-Geller, V Kolkovsky, Z Adamus, ...
Physical Review B 94 (7), 075309, 2016
15 2016 An integrated silicon MOS single-electron transistor charge sensor for spin-based quantum information processing ND Stuyck, R Li, S Kubicek, FA Mohiyaddin, J Jussot, BT Chan, G Simion, ...
IEEE Electron Device Letters 41 (8), 1253-1256, 2020
14 2020 Fractional quantum hall effect and electron correlations in partially filled first excited Landau level GE Simion, JJ Quinn
Physica E: Low-dimensional Systems and Nanostructures 41 (1), 1-5, 2008
14 2008 Impurity-generated non-Abelions G Simion, A Kazakov, LP Rokhinson, T Wojtowicz, YB Lyanda-Geller
Physical Review B 97 (24), 245107, 2018
13 2018 Modeling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation MMEK Shehata, G Simion, R Li, FA Mohiyaddin, D Wan, M Mongillo, ...
Physical Review B 108 (4), 045305, 2023
12 2023 Uniform spin qubit devices with tunable coupling in an all-silicon 300 mm integrated process NID Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, BT Chan, ...
2021 Symposium on VLSI Circuits, 1-2, 2021
10 2021 Moving spins from lab to fab: A silicon-based platform for quantum computing device technologies B Govoreanu, S Kubicek, J Jussot, BT Chan, NI Dumoulin-Stuyck, ...
2019 Silicon Nanoelectronics Workshop (SNW), 1-2, 2019
10 2019 Friedel oscillations in a two dimensional Fermi liquid GF Giuliani, GE Simion
Solid state communications 127 (12), 789-791, 2003
10 2003 Low charge noise quantum dots with industrial CMOS manufacturing A Elsayed, M Shehata, C Godfrin, S Kubicek, S Massar, Y Canvel, ...
arXiv preprint arXiv:2212.06464, 2022
9 2022 