| Current collapse reduction in AlGaN/GaN HEMTs by high-pressure water vapor annealing JT Asubar, Y Kobayashi, K Yoshitsugu, Z Yatabe, H Tokuda, M Horita, ... IEEE Transactions on Electron Devices 62 (8), 2423-2428, 2015 | 33 | 2015 |
| Characterizations of Al2O3 gate dielectric deposited on n‐GaN by plasma‐assisted atomic layer deposition K Yoshitsugu, M Horita, Y Ishikawa, Y Uraoka physica status solidi (c) 10 (11), 1426-1429, 2013 | 27 | 2013 |
| Comparison between effects of PECVD-SiOx and thermal ALD-AlOx passivation layers on characteristics of amorphous InGaZnO TFTs J Tanaka, Y Ueoka, K Yoshitsugu, M Fujii, Y Ishikawa, Y Uraoka, ... ECS Journal of Solid State Science and Technology 4 (7), Q61, 2015 | 23 | 2015 |
| Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing K Yoshitsugu, M Horita, Y Ishikawa, Y Uraoka ECS Transactions 67 (1), 205, 2015 | 6 | 2015 |
| Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure T Shibata, M Uenuma, T Yamada, K Yoshitsugu, M Higashi, K Nishimura, ... Japanese Journal of Applied Physics 61 (6), 065502, 2022 | 5 | 2022 |
| Electrical characteristics of ALD-Al2O3 gate dielectric on n-GaN treated by high pressure water vapor annealing K Yoshitsugu, T Umehara, M Horita, Y Ishikawa, Y Uraoka IEICE Technical Report; IEICE Tech. Rep. 113 (351), 7-11, 2013 | 4 | 2013 |
| Effect of high-pressure deuterium oxide annealing on Al2O3 deposited by plasma-assisted atomic layer deposition at low temperature K Yoshitsugu, K Ohara, N Hattori, M Horita, Y Ishikawa, Y Uraoka 2012 IEEE International Meeting for Future of Electron Devices, Kansai, 1-2, 2012 | 2 | 2012 |
| 大型ダイヤモンド基板を用いた GaN-on-Diamond HEMT の開発 檜座秀一， 今村謙， 白柳裕介， 吉嗣晃治， 滝口雄貴， 西村邦彦， 高木秀樹， ... 電気学会論文誌 C (電子・情報・システム部門誌) 142 (3), 354-359, 2022 | 1 | 2022 |
| Semiconductor manufacturing method and semiconductor manufacturing device K Nakamura, M Suita, A Imai, K Kurahashi, T Shinagawa, T Matsuda, ... US Patent 11,107,685, 2021 | 1 | 2021 |
| Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure A Imai, K Yoshitsugu, T Nanjo, T Watahiki, M Yamamuka IEICE Technical Report; IEICE Tech. Rep. 118 (402), 59-62, 2019 | 1 | 2019 |
| Semiconductor device, and method of manufacturing semiconductor device K Yoshitsugu, E Yagyu US Patent App. 17/780,521, 2022 | | 2022 |
| Semiconductor device including a diamond substrate and method of manufacturing the semiconductor device K Yoshitsugu, K Nakamura, E Yagyu US Patent 11,482,464, 2022 | | 2022 |
| Semiconductor device and semiconductor device manufacturing method K Yoshitsugu, K Nakamura, E Yagyu US Patent App. 17/601,931, 2022 | | 2022 |
| Method for manufacturing semiconductor device T Nanjo, T Hayashida, K Yoshitsugu, A Furukawa US Patent 11,282,950, 2022 | | 2022 |
| Development of GaN-on-Diamond HEMT Using Diamond Substrate with Large Area S Hiza, K Imamura, Y Shirayanagi, K Yoshitsugu, Y Takiguchi, ... IEEJ Transactions on Electronics, Information and Systems 142 (3), 354-359, 2022 | | 2022 |
| Al2O3/AlGaN/GaN MIS 構造の電気的特性における Al2O3 成膜プロセスの影響 東雅人， 上沼睦典， 吉嗣晃治， 柳生栄治， 石河泰明， 浦岡行治 応用物理学会学術講演会講演予稿集 第 67 回応用物理学会春季学術講演会, 2802-2802, 2020 | | 2020 |
| Al2O3/AlGaN/GaN MIS 構造の電気的特性における ALD 原料の影響 東雅人， 上沼睦典， 吉嗣晃治， 柳生栄治， 石河泰明， 浦岡行治 応用物理学会学術講演会講演予稿集 第 80 回応用物理学会秋季学術講演会, 3233-3233, 2019 | | 2019 |
| Mitsubishi Electric M Takemi, Y Watanabe, Y Azuma, Y Imai, F Shohda, K Sakai, ... | | 2019 |
| GaN-on-GaN 構造の採用による転位密度低減に伴う高電界ストレスに対する電流コラプス特性の改善効果 今井章文， 吉嗣晃治， 南條拓真， 綿引達郎， 山向幹雄 電子情報通信学会技術研究報告= IEICE technical report: 信学技報 118 (403), 59-62, 2019 | | 2019 |
| 高熱伝導率ダイヤモンド基板を用いた GaN デバイスの熱解析 吉嗣晃治， 松田喬， 柳生栄治 三菱電機技報 93 (3), 196-200, 2019 | | 2019 |
Yukiharu UraokaNara Institute of Science and TechnologyVerified email at ms.naist.jp
