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Mario Lanza
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High-performance silicon photoanodes passivated with ultrathin nickel films for water oxidation
MJ Kenney, M Gong, Y Li, JZ Wu, J Feng, M Lanza, H Dai
Science 342 (6160), 836-840, 2013
6392013
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
3822019
Electronic synapses made of layered two-dimensional materials
Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ...
Nature Electronics 1 (8), 458-465, 2018
3752018
A review on resistive switching in high-k dielectrics: A nanoscale point of view using conductive atomic force microscope
M Lanza
Materials 7 (3), 2155-2182, 2014
2512014
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
2102017
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
M Lanza, K Zhang, M Porti, M Nafría, ZY Shen, LF Liu, JF Kang, D Gilmer, ...
Applied Physics Letters 100 (12), 123508, 2012
1942012
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich
Applied Physics Letters 101 (19), 193502, 2012
1822012
Graphene and related materials for resistive random access memories
F Hui, E Grustan‐Gutierrez, S Long, Q Liu, AK Ott, AC Ferrari, M Lanza
Advanced Electronic Materials 3 (8), 1600195, 2017
1652017
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature communications 11 (1), 1-15, 2020
1282020
Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ...
Nature Electronics 3 (10), 638-645, 2020
1202020
Conductive Atomic Force Microscopy: Applications in Nanomaterials
M Lanza
John Wiley & Sons, 2017
1122017
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 012905, 2016
1062016
Grain boundary mediated leakage current in polycrystalline HfO2 films
K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker
Microelectronic Engineering 88 (7), 1272-1275, 2011
1052011
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ...
Advanced Functional Materials 30 (18), 1900657, 2020
972020
Nanoscale characterization of PM2. 5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles
Y Shi, Y Ji, H Sun, F Hui, J Hu, Y Wu, J Fang, H Lin, J Wang, H Duan, ...
Scientific reports 5 (1), 1-10, 2015
972015
On the use of two dimensional hexagonal boron nitride as dielectric
F Hui, C Pan, Y Shi, Y Ji, E Grustan-Gutierrez, M Lanza
Microelectronic Engineering 163, 119-133, 2016
902016
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
752021
Scanning probe microscopy for advanced nanoelectronics
F Hui, M Lanza
Nature electronics 2 (6), 221-229, 2019
732019
A review on the use of graphene as a protective coating against corrosion
J Hu, Y Ji, Y Shi, F Hui, H Duan, M Lanza
Ann. J. Mater. Sci. Eng 1, 16, 2014
732014
Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker
Journal of Applied Physics 114 (13), 134503, 2013
732013
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