Mario Lanza
Cited by
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High-performance silicon photoanodes passivated with ultrathin nickel films for water oxidation
MJ Kenney, M Gong, Y Li, JZ Wu, J Feng, M Lanza, H Dai
Science 342 (6160), 836-840, 2013
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Electronic synapses made of layered two-dimensional materials
Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ...
Nature Electronics 1 (8), 458-465, 2018
A review on resistive switching in high-k dielectrics: A nanoscale point of view using conductive atomic force microscope
M Lanza
Materials 7 (3), 2155-2182, 2014
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature Communications 11 (1), 3385, 2020
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
M Lanza, K Zhang, M Porti, M Nafría, ZY Shen, LF Liu, JF Kang, D Gilmer, ...
Applied Physics Letters 100 (12), 123508, 2012
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich
Applied Physics Letters 101 (19), 193502, 2012
Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ...
Nature Electronics 3 (10), 638-645, 2020
Graphene and related materials for resistive random access memories
F Hui, E Grustan‐Gutierrez, S Long, Q Liu, AK Ott, AC Ferrari, M Lanza
Advanced Electronic Materials 3 (8), 1600195, 2017
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Conductive Atomic Force Microscopy: Applications in Nanomaterials
M Lanza
John Wiley & Sons, 2017
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ...
Advanced Functional Materials 30 (18), 1900657, 2020
Nanoscale characterization of PM2. 5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles
Y Shi, Y Ji, H Sun, F Hui, J Hu, Y Wu, J Fang, H Lin, J Wang, H Duan, ...
Scientific reports 5 (1), 1-10, 2015
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 012905, 2016
Grain boundary mediated leakage current in polycrystalline HfO2 films
K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker
Microelectronic Engineering 88 (7), 1272-1275, 2011
A review on principles and applications of scanning thermal microscopy (SThM)
Y Zhang, W Zhu, F Hui, M Lanza, T Borca‐Tasciuc, M Muñoz Rojo
Advanced functional materials 30 (18), 1900892, 2020
On the use of two dimensional hexagonal boron nitride as dielectric
F Hui, C Pan, Y Shi, Y Ji, E Grustan-Gutierrez, M Lanza
Microelectronic Engineering 163, 119-133, 2016
Memristive technologies for data storage, computation, encryption, and radio-frequency communication
M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ...
Science 376 (6597), eabj9979, 2022
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