Roy B. Chung

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Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerified email at engineering.ucsb.edu
Daniel FeezellUniversity of New MexicoVerified email at unm.edu
Yuji ZhaoAssociate Professor, Electrical and Computer Engineering, Rice UniversityVerified email at rice.edu
Hisashi MasuiVerified email at alumni.engr.ucsb.edu
Dan HaegerAppleVerified email at apple.com
Erin C. YoungUniversity of California, Santa BarbaraVerified email at engineering.ucsb.edu
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of PhotonicsVerified email at nycu.edu.tw
Ingrid KoslowMaterials Department, University of California Santa BarbaraVerified email at umail.ucsb.edu
Stephen W. KaunApeel SciencesVerified email at apeelsciences.com
Rongming ChuThe Pennsylvania State UniversityVerified email at psu.edu

Roy B. Chung

Kyungpook National University

Verified email at knu.ac.kr

Semiconductor materials and devices


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura US Patent 8,148,713, 2012	579	2012
Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura US Patent 8,148,713, 2012	579	2012
Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura US Patent 8,148,713, 2012	579	2012
High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2021) GaN substrates S Yamamoto, Y Zhao, CC Pan, RB Chung, K Fujito, J Sonoda, ... Applied physics express 3 (12), 122102, 2010	216	2010
Optical properties of yellow light-emitting diodes grown on semipolar (112¯ 2) bulk GaN substrates H Sato, RB Chung, H Hirasawa, N Fellows, H Masui, F Wu, M Saito, ... Applied Physics Letters 92 (22), 2008	206	2008
Optical properties of yellow light-emitting diodes grown on semipolar (112¯ 2) bulk GaN substrates H Sato, RB Chung, H Hirasawa, N Fellows, H Masui, F Wu, M Saito, ... Applied Physics Letters 92 (22), 2008	206	2008
High power and high efficiency green light emitting diode on free‐standing semipolar (11 ̄2 2) bulk GaN substrate H Sato, A Tyagi, H Zhong, N Fellows, RB Chung, M Saito, K Fujito, ... physica status solidi (RRL)–Rapid Research Letters 1 (4), 162-164, 2007	139	2007
MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES H Sato, RB Chung, F Wu, JS Speck, SP DenBaars, S Nakamura US Patent App. 12/419,128, 2009	137	2009
MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES H Sato, RB Chung, F Wu, JS Speck, SP DenBaars, S Nakamura US Patent App. 12/419,128, 2009	137	2009
High quality AlN grown on SiC by metal organic chemical vapor deposition Z Chen, S Newman, D Brown, R Chung, S Keller, UK Mishra, ... Applied Physics Letters 93 (19), 191906-191906-3, 2008	119	2008
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯ 1¯) bulk GaN substrate H Zhong, A Tyagi, NN Fellows, F Wu, RB Chung, M Saito, K Fujito, ... Applied Physics Letters 90 (23), 2007	111	2007
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys RB Chung, Z Chen, JS Speck, SP DenBaars, S Nakamura US Patent 8,084,763, 2011	109	2011
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys RB Chung, Z Chen, JS Speck, SP DenBaars, S Nakamura US Patent 8,084,763, 2011	109	2011
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys RB Chung, Z Chen, JS Speck, SP DenBaars, S Nakamura US Patent 8,084,763, 2011	109	2011
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys RB Chung, Z Chen, JS Speck, SP DenBaars, S Nakamura US Patent 8,084,763, 2011	109	2011
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ... Applied physics letters 99 (5), 2011	100	2011
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ... Applied physics letters 99 (5), 2011	98	2011
Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck Applied physics express 4 (2), 4101, 2011	88	2011
Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates A Tyagi, H Zhong, RB Chung, DF Feezell, M Saito, K Fujito, JS Speck, ... Japanese Journal of Applied Physics 46 (5L), L444, 2007	72	2007
Growth study and impurity characterization of AlxIn1− xN grown by metal organic chemical vapor deposition RB Chung, F Wu, R Shivaraman, S Keller, SP DenBaars, JS Speck, ... Journal of crystal growth 324 (1), 163-167, 2011	62	2011

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