| FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ... IEEE Journal of the Electron Devices Society 6, 332-340, 2018 | 219 | 2018 |
| Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes D Nagy, G Espineira, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane IEEE Access 8, 53196-53202, 2020 | 93 | 2020 |
| Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element Monte Carlo simulations of nanoscaled FinFETs J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ... IEEE Transactions on Electron Devices 61 (2), 423-429, 2014 | 48 | 2014 |
| Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ... IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016 | 46 | 2016 |
| Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ... Solid-State Electronics 128, 17-24, 2016 | 44 | 2016 |
| Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET G Espineira, D Nagy, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane IEEE Electron Device Letters 40 (4), 510-513, 2019 | 37 | 2019 |
| Metal grain granularity study on a gate-all-around nanowire FET D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ... IEEE Transactions on Electron Devices 64 (12), 5263-5269, 2017 | 29 | 2017 |
| Impact of cross-sectional shape on 10-nm gate length InGaAs FinFET performance and variability N Seoane, G Indalecio, D Nagy, K Kalna, AJ Garcia-Loureiro IEEE Transactions on Electron Devices 65 (2), 456-462, 2018 | 24 | 2018 |
| 3-D finite element Monte Carlo simulations of scaled Si SOI FinFET with different cross sections D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ... IEEE Transactions on Nanotechnology 14 (1), 93-100, 2014 | 24 | 2014 |
| A multi-method simulation toolbox to study performance and variability of nanowire FETs N Seoane, D Nagy, G Indalecio, G Espiñeira, K Kalna, A García-Loureiro Materials 12 (15), 2391, 2019 | 23 | 2019 |
| Anisotropic quantum corrections for 3-D finite-element Monte Carlo simulations of nanoscale multigate transistors MA Elmessary, D Nagy, M Aldegunde, J Lindberg, WG Dettmer, D Períc, ... IEEE Transactions on Electron Devices 63 (3), 933-939, 2016 | 19 | 2016 |
| Impact of threshold voltage extraction methods on semiconductor device variability G Espiñera, D Nagy, A García-Loureiro, N Seoane, G Indalecio Solid-State Electronics 159, 165-170, 2019 | 13 | 2019 |
| Simulation and modeling of novel electronic device architectures with NESS (nano-electronic simulation software): A modular nano TCAD simulation framework C Medina-Bailon, T Dutta, A Rezaei, D Nagy, F Adamu-Lema, ... Micromachines 12 (6), 680, 2021 | 12 | 2021 |
| Drift-diffusion versus Monte Carlo simulated ON-current variability in nanowire FETs D Nagy, G Indalecio, AJ Garcia-Loureiro, G Espineira, MA Elmessary, ... IEEE Access 7, 12790-12797, 2019 | 11 | 2019 |
| 3D Schrödinger equation quantum corrected Monte Carlo and drift diffusion simulations of stacked nanosheet gate-all-around transistor K Kalna, D Nagy, AJ García-Loureiro, N Seoane IWCN, Wien: Institute for Microelectronics, TU Wien 61, 33-35, 2019 | 10 | 2019 |
| Simulation study of scaled In0. 53Ga0. 47As and Si FinFETs for sub-16 nm technology nodes N Seoane, M Aldegunde, D Nagy, MA Elmessary, G Indalecio, ... Semiconductor Science and Technology 31 (7), 075005, 2016 | 10 | 2016 |
| Nano-electronic simulation software (NESS): A novel open-source TCAD simulation environment C Medina-Bailon, T Dutta, F Adamu-Lema, A Rezaei, D Nagy, ... Journal of Microelectronic Manufacturing 3 (4), 2020 | 9 | 2020 |
| Tcad simulation of novel semiconductor devices T Dutta, C Medina-Bailon, A Rezaei, D Nagy, F Adamu-Lema, N Xeni, ... 2021 IEEE 14th International Conference on ASIC (ASICON), 1-4, 2021 | 6 | 2021 |
| Enhanced capabilities of the nano-electronic simulation software (ness) C Medina-Bailon, O Badami, H Carrillo-Nunez, T Dutta, D Nagy, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 5 | 2020 |
| Hierarchical simulation of nanosheet field effect transistor: NESS flow D Nagy, A Rezaei, N Xeni, T Dutta, F Adamu-Lema, I Topaloglu, ... Solid-State Electronics 199, 108489, 2023 | 3 | 2023 |
