Chiara Marchiori
Chiara Marchiori
Unknown affiliation
Verified email at zurich.ibm.com
Title
Cited by
Cited by
Year
A strong electro-optically active lead-free ferroelectric integrated on silicon
S Abel, T Stöferle, C Marchiori, C Rossel, MD Rossell, R Erni, D Caimi, ...
Nature communications 4 (1), 1-6, 2013
2432013
High- dielectrics for the gate stack
JP Locquet, C Marchiori, M Sousa, J Fompeyrine, JW Seo
Journal of Applied Physics 100 (5), 051610, 2006
1432006
Inversion mode -channel GaAs field effect transistor with high-/metal gate
JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ...
Applied Physics Letters 92 (15), 153508, 2008
1142008
Field-effect transistors with as gate oxide
C Rossel, B Mereu, C Marchiori, D Caimi, M Sousa, A Guiller, H Siegwart, ...
Applied physics letters 89 (5), 053506, 2006
962006
Interface formation and defect structures in epitaxial thin films on (111) Si
JW Seo, J Fompeyrine, A Guiller, G Norga, C Marchiori, H Siegwart, ...
Applied Physics Letters 83 (25), 5211-5213, 2003
832003
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ...
APL materials 2 (8), 086104, 2014
742014
A hybrid barium titanate–silicon photonics platform for ultraefficient electro-optic tuning
S Abel, T Stöferle, C Marchiori, D Caimi, L Czornomaz, M Stuckelberger, ...
Journal of Lightwave Technology 34 (8), 1688-1693, 2016
732016
Very high- with passivating interfacial layers on germanium substrates
G Mavrou, P Tsipas, A Sotiropoulos, S Galata, Y Panayiotatos, ...
Applied Physics Letters 93 (21), 212904, 2008
712008
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with gate dielectrics and interlayers
SJ Koester, EW Kiewra, Y Sun, DA Neumayer, JA Ott, M Copel, ...
Applied physics letters 89 (4), 042104, 2006
712006
SrHfO3 as gate dielectric for future CMOS technology
C Rossel, M Sousa, C Marchiori, J Fompeyrine, D Webb, D Caimi, ...
Microelectronic engineering 84 (9-10), 1869-1873, 2007
692007
Germanium-induced stabilization of a very high- zirconia phase in gate stacks
P Tsipas, SN Volkos, A Sotiropoulos, SF Galata, G Mavrou, D Tsoutsou, ...
Applied physics letters 93 (8), 082904, 2008
662008
Oxygenated amorphous carbon for resistive memory applications
CA Santini, A Sebastian, C Marchiori, VP Jonnalagadda, L Dellmann, ...
Nature communications 6 (1), 1-9, 2015
642015
Optical properties of epitaxial thin films grown on Si
M Sousa, C Rossel, C Marchiori, H Siegwart, D Caimi, JP Locquet, ...
Journal of Applied Physics 102 (10), 104103, 2007
612007
Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics
KJ Kormondy, Y Popoff, M Sousa, F Eltes, D Caimi, MD Rossell, M Fiebig, ...
Nanotechnology 28 (7), 075706, 2017
542017
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
L Czornomaz, M El Kazzi, M Hopstaken, D Caimi, P Mächler, C Rossel, ...
Solid-State Electronics 74, 71-76, 2012
542012
Solid phase epitaxy of on : The relationship between oxygen stoichiometry and interface stability
GJ Norga, C Marchiori, C Rossel, A Guiller, JP Locquet, H Siegwart, ...
Journal of Applied Physics 99 (8), 084102, 2006
522006
H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
C Marchiori, DJ Webb, C Rossel, M Richter, M Sousa, C Gerl, R Germann, ...
Journal of Applied Physics 106 (11), 114112, 2009
512009
Thermal stability of the stacks epitaxially grown on Si
C Marchiori, M Sousa, A Guiller, H Siegwart, JP Locquet, J Fompeyrine, ...
Applied physics letters 88 (7), 072913, 2006
482006
Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si
S Abel, M Sousa, C Rossel, D Caimi, MD Rossell, R Erni, J Fompeyrine, ...
Nanotechnology 24 (28), 285701, 2013
462013
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
L Czornomaz, N Daix, D Caimi, M Sousa, R Erni, MD Rossell, M El-Kazzi, ...
2012 International Electron Devices Meeting, 23.4. 1-23.4. 4, 2012
442012
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Articles 1–20