| Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles NEB Cowern, KTF Janssen, HFF Jos Journal of applied physics 68 (12), 6191-6198, 1990 | 287 | 1990 |
| Design of varactor-based tunable matching networks for dynamic load modulation of high power amplifiers HM Nemati, C Fager, U Gustavsson, R Jos, H Zirath IEEE Transactions on Microwave Theory and Techniques 57 (5), 1110-1118, 2009 | 196 | 2009 |
| A strong reduction in the density of near-interface traps at the SiO2∕ 4H‐SiC interface by sodium enhanced oxidation F Allerstam, HÖ Ólafsson, G Gudjonsson, D Dochev, EÖ Sveinbjörnsson, ... Journal of Applied Physics 101 (12), 2007 | 91 | 2007 |
| Continuous class-E power amplifier modes M Ozen, R Jos, C Fager IEEE Transactions on Circuits and Systems II: Express Briefs 59 (11), 731-735, 2012 | 86 | 2012 |
| Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers V Desmaris, M Rudzinski, N Rorsman, PR Hageman, PK Larsen, H Zirath, ... IEEE Transactions on electron devices 53 (9), 2413-2417, 2006 | 82 | 2006 |
| A generalized combiner synthesis technique for class-E outphasing transmitters M Özen, M Van Der Heijden, M Acar, R Jos, C Fager IEEE Transactions on Circuits and Systems I: Regular Papers 64 (5), 1126-1139, 2017 | 78 | 2017 |
| High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material G Gudjonsson, HO Olafsson, F Allerstam, PA Nilsson, EO Sveinbjornsson, ... IEEE electron device letters 26 (2), 96-98, 2005 | 77 | 2005 |
| High-efficiency RF pulsewidth modulation of class-E power amplifiers M Ozen, R Jos, CM Andersson, M Acar, C Fager IEEE Transactions on Microwave Theory and Techniques 59 (11), 2931-2942, 2011 | 58 | 2011 |
| SPECIAL ISSUE ON HIGH-SPEED CIRCUITS:-2000 GaAs IC SYMPOSIUM AND 2000 BIPOLAR/BiCMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM)-BCTM PAPERS-Technology Developments Driving an … R Jos IEEE Journal of Solid State Circuits-Institute of Electrical and Electronics …, 2001 | 50 | 2001 |
| Efficient linear LINC power amplifier MP van der Heijden, AJM De Graaw, JS Vromans, R Jos US Patent 8,269,555, 2012 | 49 | 2012 |
| High field effect mobility in Si face 4H-SiC MOSFET transistors HÖ Ólafsson, G Gudjonsson, PÅ Nilsson, EÖ Sveinbjörnsson, H Zirath, ... Electronics Letters 40 (8), 1, 2004 | 44 | 2004 |
| Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD M Rudziński, V Desmaris, PA Van Hal, JL Weyher, PR Hageman, ... physica status solidi c 3 (6), 2231-2236, 2006 | 37 | 2006 |
| Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs F Allerstam, G Gudjonsson, HÖ Ólafsson, EÖ Sveinbjörnsson, T Rödle, ... Semiconductor science and technology 22 (4), 307, 2007 | 29 | 2007 |
| RF power silicon-on-glass VDMOSFETs N Nenadovic, V Cuoco, SJCH Theeuwen, H Schellevis, G Spierings, ... IEEE Electron Device Letters 25 (6), 424-426, 2004 | 29 | 2004 |
| Technology developments driving an evolution of cellular phone power amplifiers to integrated RF front-end modules R Jos IEEE Journal of Solid-State Circuits 36 (9), 1382-1389, 2001 | 28 | 2001 |
| Design and characterization of integrated passive elements on high ohmic silicon E Valletta, J Van Beek, A Den Dekker, N Pulsford, HFF Jos, ... IEEE MTT-S International Microwave Symposium Digest, 2003 2, 1235-1238, 2003 | 27 | 2003 |
| Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates M Rudziński, E Jezierska, JL Weyher, L Macht, PR Hageman, J Borysiuk, ... physica status solidi (a) 204 (12), 4230-4240, 2007 | 26 | 2007 |
| High channel mobility 4H-SiC MOSFETs EÖ Sveinbjörnsson, G Gudjonsson, F Allerstam, HÖ Ólafsson, PÅ Nilsson, ... Materials science forum 527, 961-966, 2006 | 26 | 2006 |
| Bipolar transistor epilayer design using the MAIDS mixed-level simulator LCN de Vreede, HC de Graaff, JA Willemen, W van Noort, R Jos, ... IEEE Journal of Solid-State Circuits 34 (9), 1331-1338, 1999 | 26 | 1999 |
| Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures HM Nemati, C Fager, U Gustavsson, R Jos, H Zirath 2008 IEEE MTT-S International Microwave Symposium Digest, 1505-1508, 2008 | 24 | 2008 |
