David Esseni
Title
Cited by
Cited by
Year
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano letters 13 (7), 3237-3242, 2013
2872013
Nanoscale MOS transistors: semi-classical transport and applications
D Esseni, P Palestri, L Selmi
Cambridge University Press, 2011
2082011
Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
P Palestri, D Esseni, S Eminente, C Fiegna, E Sangiorgi, L Selmi
IEEE Transactions on Electron Devices 52 (12), 2727-2735, 2005
1812005
Physically based modeling of low field electron mobility in ultrathin single-and double-gate SOI n-MOSFETs
D Esseni, A Abramo, L Selmi, E Sangiorgi
IEEE transactions on electron devices 50 (12), 2445-2455, 2003
1772003
Inverters with strained Si nanowire complementary tunnel field-effect transistors
L Knoll, QT Zhao, A Nichau, S Trellenkamp, S Richter, A Schäfer, ...
IEEE electron device letters 34 (6), 813-815, 2013
1692013
Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi
IEEE Transactions on Electron Devices 48 (12), 2842-2850, 2001
1432001
Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
D Esseni, A Abramo
IEEE Transactions on Electron Devices 50 (7), 1665-1674, 2003
1422003
Multisubband Monte Carlo study of transport, quantization, and electron-gas degeneration in ultrathin SOI n-MOSFETs
L Lucci, P Palestri, D Esseni, L Bergagnini, L Selmi
IEEE transactions on electron devices 54 (5), 1156-1164, 2007
133*2007
An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode
D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi
IEEE Transactions on Electron Devices 50 (3), 802-808, 2003
1322003
On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field
D Esseni
IEEE Transactions on Electron Devices 51 (3), 394-401, 2004
1272004
Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor
M Li, D Esseni, G Snider, D Jena, H Grace Xing
Journal of Applied Physics 115 (7), 074508, 2014
1132014
Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFETs)
MO Li, D Esseni, JJ Nahas, D Jena, HG Xing
IEEE Journal of the Electron Devices Society 3 (3), 200-207, 2015
1122015
Trading-off programming speed and current absorption in flash memories with the ramped-gate programming technique
D Esseni, C Villa, S Tassan, B Ricco
Ieee Transactions on Electron Devices 47 (4), 828-834, 2000
1072000
Universal analytic model for tunnel FET circuit simulation
H Lu, D Esseni, A Seabaugh
Solid-State Electronics 108, 110-117, 2015
99*2015
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann transport equation
M Lenzi, P Palestri, E Gnani, S Reggiani, A Gnudi, D Esseni, L Selmi, ...
IEEE transactions on electron devices 55 (8), 2086-2096, 2008
992008
Strain-induced performance improvements in InAs nanowire tunnel FETs
F Conzatti, MG Pala, D Esseni, E Bano, L Selmi
IEEE transactions on electron devices 59 (8), 2085-2092, 2012
942012
Leakage–delay tradeoff in FinFET logic circuits: A comparative analysis with bulk technology
M Agostinelli, M Alioto, D Esseni, L Selmi
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 18 (2), 232-245, 2009
922009
Low field mobility of ultra-thin SOI N-and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs
D Esseni, M Mastrapasqua, GK Celler, FH Baumann, C Fiegna, L Selmi, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
912000
Interface traps in InAs nanowire tunnel-FETs and MOSFETs—Part I: Model description and single trap analysis in tunnel-FETs
MG Pala, D Esseni
IEEE transactions on electron devices 60 (9), 2795-2801, 2013
812013
A new and flexible scheme for hot-electron programming of nonvolatile memory cells
D Esseni, A Della Strada, P Cappelletti, B Ricco
IEEE Transactions on Electron Devices 46 (1), 125-133, 1999
76*1999
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Articles 1–20