| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 297 | 2018 |
| Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth M Jutzi, M Berroth, G Wohl, M Oehme, E Kasper IEEE Photonics Technology Letters 17 (7), 1510-1512, 2005 | 291 | 2005 |
| Germanium-tin pin photodetectors integrated on silicon grown by molecular beam epitaxy J Werner, M Oehme, M Schmid, M Kaschel, A Schirmer, E Kasper, ... Applied physics letters 98 (6), 2011 | 227 | 2011 |
| Electrical spin injection and transport in germanium Y Zhou, W Han, LT Chang, F Xiu, M Wang, M Oehme, IA Fischer, ... Physical Review B 84 (12), 125323, 2011 | 216 | 2011 |
| GeSn pin detectors integrated on Si with up to 4% Sn M Oehme, M Schmid, M Kaschel, M Gollhofer, D Widmann, E Kasper, ... Applied Physics Letters 101 (14), 2012 | 210 | 2012 |
| Electrically pumped lasing from Ge Fabry-Perot resonators on Si R Koerner, M Oehme, M Gollhofer, M Schmid, K Kostecki, S Bechler, ... Optics express 23 (11), 14815-14822, 2015 | 182 | 2015 |
| High bandwidth Ge pin photodetector integrated on Si M Oehme, J Werner, E Kasper, M Jutzi, M Berroth Applied physics letters 89 (7), 2006 | 159 | 2006 |
| Germanium tin: silicon photonics toward the mid-infrared E Kasper, M Kittler, M Oehme, T Arguirov Photonics Research 1 (2), 69-76, 2013 | 158 | 2013 |
| Ge-on-Si pin photodiodes with a 3-dB bandwidth of 49 GHz S Klinger, M Berroth, M Kaschel, M Oehme, E Kasper IEEE Photonics Technology Letters 21 (13), 920-922, 2009 | 150 | 2009 |
| Growth of silicon based germanium tin alloys E Kasper, J Werner, M Oehme, S Escoubas, N Burle, J Schulze Thin Solid Films 520 (8), 3195-3200, 2012 | 131 | 2012 |
| New virtual substrate concept for vertical MOS transistors E Kasper, K Lyutovich, M Bauer, M Oehme Thin Solid Films 336 (1-2), 319-322, 1998 | 128 | 1998 |
| Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn M Oehme, K Kostecki, M Schmid, F Oliveira, E Kasper, J Schulze Thin Solid Films 557, 169-172, 2014 | 124 | 2014 |
| Room-temperature electroluminescence from GeSn light-emitting pin diodes on Si M Oehme, J Werner, M Gollhofer, M Schmid, M Kaschel, E Kasper, ... IEEE Photonics Technology Letters 23 (23), 1751-1753, 2011 | 123 | 2011 |
| GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz M Oehme, K Kostecki, K Ye, S Bechler, K Ulbricht, M Schmid, M Kaschel, ... Optics express 22 (1), 839-846, 2014 | 104 | 2014 |
| GeSn heterojunction LEDs on Si substrates M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ... IEEE Photonics Technology Letters 26 (2), 187-189, 2013 | 104 | 2013 |
| Composition and strain in thin Si1− xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction TS Perova, J Wasyluk, K Lyutovich, E Kasper, M Oehme, K Rode, ... Journal of Applied Physics 109 (3), 2011 | 103 | 2011 |
| GeSn/Ge multiquantum well photodetectors on Si substrates M Oehme, D Widmann, K Kostecki, P Zaumseil, B Schwartz, M Gollhofer, ... Optics letters 39 (16), 4711-4714, 2014 | 91 | 2014 |
| Direct bandgap narrowing in Ge LED’s on Si substrates M Oehme, M Gollhofer, D Widmann, M Schmid, M Kaschel, E Kasper, ... Optics express 21 (2), 2206-2211, 2013 | 89 | 2013 |
| Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze Journal of crystal growth 384, 71-76, 2013 | 85 | 2013 |
| Germanium waveguide photodetectors integrated on silicon with MBE M Oehme, J Werner, M Kaschel, O Kirfel, E Kasper Thin Solid Films 517 (1), 137-139, 2008 | 78 | 2008 |
