Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals SK Samanta, PK Singh, WJ Yoo, G Samudra, YC Yeo, LK Bera, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 63 | 2005 |
Metal nanocrystal memory with pt single-and dual-layer NC With low-Leakage AI2O3 Blocking Dielectric PK Singh, G Bisht, R Hofmann, K Singh, N Krishna, S Mahapatra Electron Device Letters 29, 1389 -1391, 2008 | 41* | 2008 |
Nitride engineering and the effect of interfaces on charge trap flash performance and reliability C Sandhya, U Ganguly, KK Singh, PK Singh, C Olsen, SM Seutter, ... 2008 IEEE International Reliability Physics Symposium, 406-411, 2008 | 24 | 2008 |
Partial Crystallization of for Two-Bit/Four-Level SONOS-Type Flash Memory G Zhang, SK Samanta, PK Singh, FJ Ma, MT Yoo, Y Roh, WJ Yoo IEEE Transactions on Electron Devices 54 (12), 3177-3185, 2007 | 20 | 2007 |
Performance and reliability study of single-layer and dual-layer platinum nanocrystal flash memory devices under NAND operation PK Singh, G Bisht, K Auluck, M Sivatheja, R Hofmann, KK Singh, ... IEEE Transactions on Electron Devices 57 (8), 1829-1837, 2010 | 18 | 2010 |
Long retention and low voltage operation using IrO/sub 2/HfAlO/HfSiO/HfalO gate stack for memory application YQ Wang, PK Singh, WJ Yoo, YC Yeo, G Samudra, A Chin, WS Hwang, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 16 | 2005 |
Performance and reliability of Au and Pt single-layer metal nanocrystal flash memory under NAND (FN/FN) operation PK Singh, R Hofmann, KK Singh, N Krishna, S Mahapatra IEEE Transactions on Electron Devices 56 (9), 2065-2072, 2009 | 15 | 2009 |
Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack ZZ Lwin, KL Pey, C Liu, Q Liu, Q Zhang, YN Chen, PK Singh, S Mahapatra Applied Physics Letters 99 (22), 222102, 2011 | 12 | 2011 |
Development of a 3D simulator for metal nanocrystal (NC) flash memories under NAND operation A Nainani, S Palit, PK Singh, U Ganguly, N Krishna, J Vasi, S Mahapatra 2007 IEEE International Electron Devices Meeting, 947-950, 2007 | 12 | 2007 |
Tri-Level Resistive Switching in Metal-Nanocrystal-Based Gate Stack YN Chen, KL Pey, KEJ Goh, ZZ Lwin, PK Singh, S Mahapatra IEEE Transactions on Electron Devices 57 (11), 3001-3005, 2010 | 10 | 2010 |
Reliability of single and dual layer Pt nanocrystal devices for NAND flash applications: A 2-region model for endurance defect generation PK Singh, G Bisht, M Sivatheja, C Sandhya, G Mukhopadhyay, ... 2009 IEEE International Reliability Physics Symposium, 301-306, 2009 | 10 | 2009 |
Au nanocrystal flash memory reliability and failure analysis PK Singh, KK Singh, R Hofmann, K Armstrong, N Krishna, S Mahapatra 2008 15th International Symposium on the Physical and Failure Analysis of …, 2008 | 9 | 2008 |
Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application PK Singh, G Bisht, R Hofmann, K Singh, S Mahapatra 2009 IEEE International Memory Workshop, 1-4, 2009 | 7 | 2009 |
40nm & 22nm Embedded Charge Trap Flash for Automotive Applications J Pak, C Chen, KT Chang, S Shetty, A Tu, J Neo, P Singh, S Amato, ... 2018 IEEE International Memory Workshop (IMW), 1-4, 2018 | 6 | 2018 |
Charging and discharging characteristics of metal nanocrystals in degraded dielectric stacks ZZ Lwin, KL Pey, YN Chen, PK Singh, S Mahapatra 2010 IEEE International Reliability Physics Symposium, 89-93, 2010 | 6 | 2010 |
Suppression of program disturb with bit line and select gate voltage regulation C Chen, KT Chang, Y Betser, S Shetty, G Mazzeo, TW Neo, P Singh US Patent 10,685,724, 2020 | 4 | 2020 |
Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack YN Chen, KEJ Goh, X Wu, ZZ Lwin, PK Singh, S Mahapatra, KL Pey Journal of Applied Physics 112 (10), 104503-104503-6, 2012 | 4 | 2012 |
Method of reducing charge loss in non-volatile memories PK Singh, S Shetty, J Pak US Patent 10,068,912, 2018 | 3 | 2018 |
Suppression of program disturb with bit line and select gate voltage regulation US Patent 9,881,683, 2018 | 3* | 2018 |
Recent advances in charge trap flash memories C Sandhya, PK Singh, S Gupta, H Rohra, M Shivatheja, U Ganguly, ... Electron Devices and Semiconductor Technology, 2009. IEDST'09. 2nd …, 2009 | 3 | 2009 |