Langmuir− Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures S Paul, C Pearson, A Molloy, MA Cousins, M Green, S Kolliopoulou, ...
Nano Letters 3 (4), 533-536, 2003
361 2003 Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices. M Lübben, P Karakolis, V Ioannou-Sougleridis, P Normand, P Dimitrakis, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (40), 6202-6207, 2015
154 2015 Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
147 2004 Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
143 2003 Hybrid silicon–organic nanoparticle memory device S Kolliopoulou, P Dimitrakis, P Normand, HL Zhang, N Cant, SD Evans, ...
Journal of Applied Physics 94 (8), 5234-5239, 2003
141 2003 Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
109 2004 Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications AV Emelyanov, KE Nikiruy, VA Demin, VV Rylkov, AI Belov, DS Korolev, ...
Microelectronic Engineering 215, 110988, 2019
89 2019 Recent advances in nanoparticle memories D Tsoukalas, P Dimitrakis, S Kolliopoulou, P Normand
Materials Science and Engineering: B 124, 93-101, 2005
84 2005 Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
69 2004 Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
64 2006 Si and Ge nanocrystals for future memory devices C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ...
Materials Science in Semiconductor Processing 15 (6), 615-626, 2012
50 2012 Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors SV Tikhov, AN Mikhaylov, AI Belov, DS Korolev, IN Antonov, VV Karzanov, ...
Microelectronic Engineering 187, 134-138, 2018
49 2018 MOS memory structures by very-low-energy-implanted Si in thin SiO2 P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ...
Materials Science and Engineering: B 101 (1-3), 14-18, 2003
49 2003 Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ...
Solid-State Electronics 49 (11), 1734-1744, 2005
45 2005 Electronic memory device based on a single-layer fluorene-containing organic thin film C Pearson, JH Ahn, MF Mabrook, DA Zeze, MC Petty, KT Kamtekar, ...
Applied Physics Letters 91 (12), 2007
44 2007 Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping N Vasileiadis, P Karakolis, P Mandylas, V Ioannou-Sougleridis, ...
IEEE Transactions on Nanotechnology, 2021
39 2021 Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy JE Kruse, L Lymperakis, S Eftychis, A Adikimenakis, G Doundoulakis, ...
Journal of Applied Physics 119 (22), 2016
39 2016 Metal nano-floating gate memory devices fabricated at low temperature S Koliopoulou, P Dimitrakis, D Goustouridis, P Normand, C Pearson, ...
Microelectronic Engineering 83 (4-9), 1563-1566, 2006
35 2006 Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, ...
Microelectronic engineering 73, 730-735, 2004
35 2004 Electrical behavior of memory devices based on fluorene-containing organic thin films P Dimitrakis, P Normand, D Tsoukalas, C Pearson, JH Ahn, MF Mabrook, ...
Journal of Applied Physics 104 (4), 2008
32 2008 