Mike Kunze
Mike Kunze
Onbekend partnerschap
Geverifieerd e-mailadres voor microgan.com
Geciteerd door
Geciteerd door
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
High-sheet-charge–carrier-density AlInN∕ GaN field-effect transistors on Si (111)
A Dadgar, F Schulze, J Bläsing, A Diez, A Krost, M Neuburger, E Kohn, ...
Applied physics letters 85 (22), 5400-5402, 2004
Piezoelectric GaN sensor structures
T Zimmermann, M Neuburger, P Benkart, FJ Hernandez-Guillen, ...
IEEE electron device letters 27 (5), 309-312, 2006
Transient characteristics of GaN-based heterostructure field-effect transistors
E Kohn, I Daumiller, M Kunze, M Neuburger, M Seyboth, TJ Jenkins, ...
IEEE Transactions on Microwave Theory and Techniques 51 (2), 634-642, 2003
Field effect transistor
FH Bonn, GB Norris, JM Golio
US Patent 6,160,280, 2000
Diamond junction FETs based on δ-doped channels
A Aleksov, A Vescan, M Kunze, P Gluche, W Ebert, E Kohn, A Bergmeier, ...
Diamond and Related Materials 8 (2-5), 941-945, 1999
P-channel InGaN-HFET structure based on polarization doping
T Zimmermann, M Neuburger, M Kunze, I Daumiller, A Denisenko, ...
IEEE Electron Device Letters 25 (7), 450-452, 2004
Unstrained InAlN/GaN HEMT structure
M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ...
Proceedings. IEEE Lester Eastman Conference on High Performance Devices …, 2004
Diamond diodes and transistors
A Aleksov, A Denisenko, M Kunze, A Vescan, A Bergmaier, G Dollinger, ...
Semiconductor science and technology 18 (3), S59, 2003
Semiconductor sensor
M Kunze, I Daumiler
US Patent 8,129,725, 2012
δ-Doping in diamond
M Kunze, A Vescan, G Dollinger, A Bergmaier, E Kohn
Carbon 37 (5), 787-791, 1999
High‐current AlInN/GaN field effect transistors
A Dadgar, M Neuburger, F Schulze, J Bläsing, A Krtschil, I Daumiller, ...
physica status solidi (a) 202 (5), 832-836, 2005
Surface stability of InGaN-channel based HFETs
M Neuburger, I Daumiller, T Zimmermann, M Kunze, G Koley, ...
Electronics Letters 39 (22), 1614-1616, 2003
GaN power semiconductors for PV inverter applications-Opportunities and risks
T Stubbe, R Mallwitz, R Rupp, G Pozzovivo, W Bergner, O Haeberlen, ...
CIPS 2014; 8th International Conference on Integrated Power Electronics …, 2014
Strains and Stresses in GaN Heteroepitaxy--Sources and Control
A Dadgar, R Clos, G Strassburger, F Schulze, P Veit, T Hempel, J Bläsing, ...
Advances in Solid State Physics, 313-325, 2004
Anisotropic bow and plastic deformation of GaN on silicon
A Dadgar, S Fritze, O Schulz, J Hennig, J Bläsing, H Witte, A Diez, ...
Journal of crystal growth 370, 278-281, 2013
Switching behaviour of GaN-based HFETs: thermal and electronic transients
E Kohn, I Daumiller, M Kunze, J Van Nostrand, J Sewell, T Jenkins
Electronics Letters 38 (12), 1, 2002
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si (0 0 1) substrates
F Schulze, O Kisel, A Dadgar, A Krtschil, J Bläsing, M Kunze, I Daumiller, ...
Journal of crystal growth 299 (2), 399-403, 2007
Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode
M Neuburger, J Allgaier, T Zimmermann, I Daumiller, M Kunze, ...
IEEE Electron Device Letters 25 (5), 256-258, 2004
Gallium‐nitride‐based devices on silicon
A Dadgar, M Poschenrieder, I Daumiller, M Kunze, A Strittmatter, ...
physica status solidi (c), 1940-1949, 2003
Het systeem kan de bewerking nu niet uitvoeren. Probeer het later opnieuw.
Artikelen 1–20