| MOVPE growth of GaN on Si (1 1 1) substrates A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ... Journal of Crystal Growth 248, 556-562, 2003 | 215 | 2003 |
| High-sheet-charge–carrier-density AlInN∕ GaN field-effect transistors on Si (111) A Dadgar, F Schulze, J Bläsing, A Diez, A Krost, M Neuburger, E Kohn, ... Applied physics letters 85 (22), 5400-5402, 2004 | 166 | 2004 |
| Piezoelectric GaN sensor structures T Zimmermann, M Neuburger, P Benkart, FJ Hernandez-Guillen, ... IEEE electron device letters 27 (5), 309-312, 2006 | 137 | 2006 |
| Transient characteristics of GaN-based heterostructure field-effect transistors E Kohn, I Daumiller, M Kunze, M Neuburger, M Seyboth, TJ Jenkins, ... IEEE Transactions on Microwave Theory and Techniques 51 (2), 634-642, 2003 | 105 | 2003 |
| Field effect transistor FH Bonn, GB Norris, JM Golio US Patent 6,160,280, 2000 | 96 | 2000 |
| Field effect transistor FH Bonn, GB Norris, JM Golio US Patent 6,160,280, 2000 | 96 | 2000 |
| Diamond junction FETs based on δ-doped channels A Aleksov, A Vescan, M Kunze, P Gluche, W Ebert, E Kohn, A Bergmeier, ... Diamond and Related Materials 8 (2-5), 941-945, 1999 | 95 | 1999 |
| P-channel InGaN-HFET structure based on polarization doping T Zimmermann, M Neuburger, M Kunze, I Daumiller, A Denisenko, ... IEEE Electron Device Letters 25 (7), 450-452, 2004 | 82 | 2004 |
| Unstrained InAlN/GaN HEMT structure M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ... Proceedings. IEEE Lester Eastman Conference on High Performance Devices …, 2004 | 71 | 2004 |
| Diamond diodes and transistors A Aleksov, A Denisenko, M Kunze, A Vescan, A Bergmaier, G Dollinger, ... Semiconductor science and technology 18 (3), S59, 2003 | 70 | 2003 |
| Semiconductor sensor M Kunze, I Daumiler US Patent 8,129,725, 2012 | 66 | 2012 |
| δ-Doping in diamond M Kunze, A Vescan, G Dollinger, A Bergmaier, E Kohn Carbon 37 (5), 787-791, 1999 | 57 | 1999 |
| High‐current AlInN/GaN field effect transistors A Dadgar, M Neuburger, F Schulze, J Bläsing, A Krtschil, I Daumiller, ... physica status solidi (a) 202 (5), 832-836, 2005 | 52 | 2005 |
| Strains and Stresses in GaN Heteroepitaxy--Sources and Control A Dadgar, R Clos, G Strassburger, F Schulze, P Veit, T Hempel, J Bläsing, ... Advances in Solid State Physics, 313-325, 2004 | 29 | 2004 |
| Surface stability of InGaN-channel based HFETs M Neuburger, I Daumiller, T Zimmermann, M Kunze, G Koley, ... Electronics Letters 39 (22), 1614-1616, 2003 | 28 | 2003 |
| GaN power semiconductors for PV inverter applications-Opportunities and risks T Stubbe, R Mallwitz, R Rupp, G Pozzovivo, W Bergner, O Haeberlen, ... CIPS 2014; 8th International Conference on Integrated Power Electronics …, 2014 | 27 | 2014 |
| Switching behaviour of GaN-based HFETs: thermal and electronic transients E Kohn, I Daumiller, M Kunze, J Van Nostrand, J Sewell, T Jenkins Electronics Letters 38 (12), 1, 2002 | 23 | 2002 |
| Anisotropic bow and plastic deformation of GaN on silicon A Dadgar, S Fritze, O Schulz, J Hennig, J Bläsing, H Witte, A Diez, ... Journal of crystal growth 370, 278-281, 2013 | 22 | 2013 |
| Micromechanical actuators comprising semiconductors on a group III nitride basis M Kunze, I Daumiller US Patent 7,939,994, 2011 | 21 | 2011 |
| Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si (0 0 1) substrates F Schulze, O Kisel, A Dadgar, A Krtschil, J Bläsing, M Kunze, I Daumiller, ... Journal of crystal growth 299 (2), 399-403, 2007 | 21 | 2007 |
