Jurriaan Schmitz
Jurriaan Schmitz
MESA+ Institute for Nanotechnology, University of Twente
Verified email at utwente.nl - Homepage
Title
Cited by
Cited by
Year
Si-Ge CMOS semiconductor device
J Schmitz, PH Woerlee
US Patent 6,271,551, 2001
2652001
A silicon-based electrical source of surface plasmon polaritons
RJ Walters, RVA van Loon, I Brunets, J Schmitz, A Polman
Nature materials 9 (1), 21-25, 2010
2442010
Electron, pion and multiparticle detection with a lead/scintillating-fiber calorimeter
D Acosta, S Buontempo, L Caloba, M Caria, R DeSalvo, A Ereditato, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1991
1741991
The charge plasma PN diode
RJE Hueting, B Rajasekharan, C Salm, J Schmitz
IEEE electron device letters 29 (12), 1367-1369, 2008
1552008
Fabrication and characterization of the charge-plasma diode
B Rajasekharan, RJE Hueting, C Salm, T van Hemert, RAM Wolters, ...
IEEE electron device letters 31 (6), 528-530, 2010
1332010
An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology
M Chefdeville, P Colas, Y Giomataris, H van der Graaf, EHM Heijne, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
1202006
Detection of single electrons by means of a Micromegas-covered MediPix2 pixel CMOS readout circuit
M Campbell, M Chefdeville, P Colas, AP Colijn, A Fornaini, Y Giomataris, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
1042005
Method of manufacturing a nonvolatile memory
AH Montree, J Schmitz, PH Woerlee
US Patent 6,251,729, 2001
912001
The readout of a GEM or Micromegas-equipped TPC by means of the Medipix2 CMOS sensor as direct anode
P Colas, AP Colijn, A Fornaini, Y Giomataris, H Van der Graaf, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2004
872004
Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors
HP Tuinhout, AH Montree, J Schmitz, PA Stolk
International Electron Devices Meeting. IEDM Technical Digest, 631-634, 1997
871997
Characterization of dielectric charging in RF MEMS capacitive switches
RW Herfst, HGA Huizing, PG Steeneken, J Schmitz
2006 IEEE International Conference on Microelectronic Test Structures, 133-136, 2006
742006
Localizing particles showering in a Spaghetti calorimeter
D Acosta, S Buontempo, L Caloba, M Caria, R DeSalvo, A Ereditato, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1991
711991
RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics
J Schmitz, FN Cubaynes, RJ Havens, R De Kort, AJ Scholten, ...
IEEE electron device letters 24 (1), 37-39, 2003
702003
Letter of intent for a general-purpose pp experiment at the Large Hadron Collider at CERN
C ATLAS, R Bonino, AG Clark, X Wu, C Couyoumtzelis, H Kambara
CERN, 1992
601992
Time and voltage dependence of dielectric charging in RF MEMS capacitive switches
RW Herfst, PG Steeneken, J Schmitz
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
572007
Growth kinetics and oxidation mechanism of ALD TiN thin films monitored by in situ spectroscopic ellipsometry
H Van Bui, AW Groenland, AAI Aarnink, RAM Wolters, J Schmitz, ...
Journal of The Electrochemical Society 158 (3), H214-H220, 2011
562011
The electrical conduction and dielectric strength of SU-8
J Melai, C Salm, S Smits, J Visschers, J Schmitz
Journal of micromechanics and microengineering 19 (6), 065012, 2009
532009
Method of manufacturing a semiconductor device with a field effect transistor
J Schmitz, PH Woerlee, AH Montree
US Patent 6,177,303, 2001
502001
High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates
YV Ponomarev, PA Stolk, C Salm, J Schmitz, PH Woerlee
IEEE transactions on electron devices 47 (4), 848-855, 2000
502000
Adding functionality to microchips by wafer post-processing
J Schmitz
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
492007
The system can't perform the operation now. Try again later.
Articles 1–20