Heteroepitaxy of La2O3 and La2–xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density X Wang, L Dong, J Zhang, Y Liu, PD Ye, RG Gordon Nano letters 13 (2), 594-599, 2013 | 98 | 2013 |
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications BS Wood, MG Ward, S Sun, M Chudzik, NS Kim, H Chung, YC Huang, ... US Patent App. 15/395,928, 2017 | 72 | 2017 |
0.1-Atomic Layer Deposition Al2O3Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers D Xu, KK Chu, JA Diaz, M Ashman, JJ Komiak, LM Pleasant, C Creamer, ... IEEE Electron Device Letters 36 (5), 442-444, 2015 | 44 | 2015 |
Nitride passivation of the interface between high-k dielectrics and SiGe K Sardashti, KT Hu, K Tang, S Madisetti, P McIntyre, S Oktyabrsky, ... Applied Physics Letters 108 (1), 2016 | 40 | 2016 |
Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm H Wu, M Si, L Dong, J Gu, J Zhang, DY Peide IEEE Transactions on Electron Devices 62 (5), 1419-1426, 2015 | 37 | 2015 |
Methods and apparatus for forming horizontal gate all around device structures A Brand, BS Wood, N Yoshida, L Dong, S Sun, NI Chi-Nung, Y Kim US Patent 9,673,277, 2017 | 28 | 2017 |
Ge CMOS: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590 mS/mm) by recessed channel and S/D H Wu, M Si, L Dong, J Zhang, DY Peide 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 28 | 2014 |
Impact of germanium related defects on electrical performance of hafnium oxide QQ Sun, Y Shi, L Dong, H Liu, SJ Ding, DW Zhang Applied Physics Letters 92 (10), 2008 | 26 | 2008 |
Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x (001) and SixGe1− x (110) M Edmonds, K Sardashti, S Wolf, E Chagarov, M Clemons, T Kent, ... The Journal of Chemical Physics 146 (5), 2017 | 25 | 2017 |
GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxialas Dielectric L Dong, XW Wang, JY Zhang, XF Li, RG Gordon, PD Ye IEEE electron device letters 34 (4), 487-489, 2013 | 22 | 2013 |
Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry K Xu, H Sio, OA Kirillov, L Dong, M Xu, PD Ye, D Gundlach, NV Nguyen Journal of Applied Physics 113 (2), 2013 | 21 | 2013 |
Method for fabricating junctions and spacers for horizontal gate all around devices N Yoshida, L Dong, S Sun, M Kim, NS Kim, D Kioussis, M Korolik, ... US Patent 10,177,227, 2019 | 15 | 2019 |
Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors Q Liu, L Dong, Y Liu, R Gordon, DY Peide, P Fay, A Seabaugh Solid-state electronics 76, 1-4, 2012 | 15 | 2012 |
Electron band alignment at the interface of (100) InSb with atomic-layer deposited Al2O3 HY Chou, VV Afanas’ev, M Houssa, A Stesmans, L Dong, PD Ye Applied Physics Letters 101 (8), 2012 | 15 | 2012 |
Low-temperature amorphous boron nitride on Si0. 7Ge0. 3 (001), Cu, and HOPG from sequential exposures of N2H4 and BCl3 S Wolf, M Edmonds, K Sardashti, M Clemons, JH Park, N Yoshida, ... Applied Surface Science 439, 689-696, 2018 | 14 | 2018 |
III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interface L Dong, XW Wang, JY Zhang, XF Li, XB Lou, N Conrad, H Wu, ... 2014 Symposium on VLSI technology (VLSI-Technology): digest of technical …, 2014 | 13 | 2014 |
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof WV Tang, PF Ma, SCH Hung, M Chudzik, S Krishnan, W Zhang, ... US Patent 9,748,354, 2017 | 12 | 2017 |
0.1-InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess D Xu, K Chu, JA Diaz, MD Ashman, JJ Komiak, LMM Pleasant, A Vera, ... IEEE Transactions on Electron Devices 63 (8), 3076-3083, 2016 | 12 | 2016 |
Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition L Dong, QQ Sun, Y Shi, HW Guo, H Liu, C Wang, SJ Ding, DW Zhang Thin solid films 517 (15), 4355-4359, 2009 | 11 | 2009 |
Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate QQ Sun, C Zhang, L Dong, Y Shi, SJ Ding, DW Zhang Journal of Applied Physics 103 (11), 2008 | 11 | 2008 |