Juan B. Roldán

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Francisco Jiménez-MolinosUniversidad de GranadaVerified email at ugr.es
Francisco GamizProfessor of ElectronicsVerified email at ugr.es
Juan A. López-VillanuevaCatedrático de Tecnología Electrónica, Universidad de GranadaVerified email at ugr.es
Mireia Bargalló GonzalezInstitut de Microelectrònica de Barcelona IMB-CNM (CSIC)Verified email at csic.es
Francesca Campabadal SeguraInstitut de Microelectronica de Barcelona, IMB-CNM, CSICVerified email at imb-cnm.csic.es
David Maldonado CorreaDepartment of Electronics and Computer Technology. University of Granada (Spain)Verified email at ugr.es
Andres GodoyUniversidad de GranadaVerified email at ugr.es
Mario LanzaKing Abdullah University of Science and Technology (KAUST)Verified email at kaust.edu.sa
Marco A. VillenaKing Abdullah University of Science and Technology (KAUST)Verified email at kaust.edu.sa
Ana Maria AguileraProfesora de Estadística, Universidad de GranadaVerified email at ugr.es
Andrés Roldán ArandaAssociate Professor of Electronics Engineering, University of GranadaVerified email at ugr.es
Rocío Romero ZalizUniversidad de GranadaVerified email at decsai.ugr.es
Samuel Aldana DelgadoPostdoctoral research fellow in Trinity College DublinVerified email at tcd.ie
Jordi SuñéProfessor of Electronics, IEEE Fellow, Universitat Autònoma de BarcelonaVerified email at uab.cat
Enrique MirandaUniversitat Autonoma de BarcelonaVerified email at uab.cat
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsVerified email at ihp-microelectronics.com
Christian AcalUniversidad de GranadaVerified email at ugr.es
Domingo Barrera RosilloProfesor de Matemáticas, Universidad de GranadaVerified email at ugr.es
Rodrigo PicosFull Professor, Industrial Engineering and Construction Dept., Universitat de les Illes BalearsVerified email at uib.es
María José Ibáñez PérezAssociate Professor in Applied Mathematics, University of GranadaVerified email at ugr.es

Juan B. Roldán

Department of Electronics and Computer Technology. Granada University (Spain)

Verified email at ugr.es

Nanoelectronics RRAMs Memristors Circuit and electron device simulation Electron device compact modeling


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	476	2019
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ... Journal of Applied Physics 86 (12), 6854-6863, 1999	142	1999
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998	102	1998
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects JB Roldan, A Godoy, F Gamiz, M Balaguer IEEE transactions on electron devices 55 (1), 411-416, 2007	97	2007
Memristive technologies for data storage, computation, encryption, and radio-frequency communication M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ... Science 376 (6597), eabj9979, 2022	95	2022
Stochastic resonance in a metal-oxide memristive device AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ... Chaos, Solitons & Fractals 144, 110723, 2021	95	2021
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility L Donetti, F Gámiz, JB Roldán, A Godoy Journal of Applied Physics 100 (1), 013701, 2006	90	2006
Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021	86	2021
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos Journal of Applied Physics 92 (1), 288-295, 2002	86	2002
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ... Journal of Applied Physics 89 (3), 1764-1770, 2001	81	2001
Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 214504, 2014	75	2014
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si_1−xGe_x channel MOSFETs JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller Journal of applied physics 80 (9), 5121-5128, 1996	73	1996
Modeling effects of electron-velocity overshoot in a MOSFET JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller IEEE Transactions on Electron Devices 44 (5), 841-846, 1997	72	1997
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ... Microelectronic Engineering 214, 104-109, 2019	69	2019
An in-depth simulation study of thermal reset transitions in resistive switching memories MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ... Journal of Applied Physics 114 (14), 144505, 2013	65	2013
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ... Journal of applied physics 86 (11), 6269-6275, 1999	64	1999
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ... Journal of Physics D: Applied Physics 50 (33), 335103, 2017	63	2017
{SIM}^2 {RRAM}: a physical model for RRAM devices simulation MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza Journal of Computational Electronics, 1-26, 2017	57*	2017
A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach G González-Cordero, JB Roldan, F Jiménez-Molinos, J Suñè, S Long, ... Semiconductor Science and Technology 31 (11), 115013, 2016	56	2016
Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors F Gamiz, JB Roldan, JE Carceller, P Cartujo Applied Physics Letters 82 (19), 3251-3253, 2003	56	2003

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