| High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes YD Lin, S Yamamoto, CY Huang, CL Hsiung, F Wu, K Fujito, H Ohta, ... Applied Physics Express 3 (8), 082001, 2010 | 95 | 2010 |
| Architecture for CMOS under array CL Hsiung, Y An, A Chu, F Toyama US Patent 9,922,716, 2018 | 47 | 2018 |
| Compensation for temperature dependence of bit line resistance CL Hsiung, M Dunga, ML Mui, M Higashitani US Patent 9,202,579, 2015 | 44 | 2015 |
| Wide and narrow patterning using common process T Yokota, CL Hsiung, F Toyama US Patent 9,224,744, 2015 | 7 | 2015 |
| Ohmic cathode electrode on the backside of m-plane and (2021) bulk GaN substrates for optical device applications CL Hsiung, YD Lin, H Ohta, SP DenBaars, S Nakamura Japanese Journal of Applied Physics 50 (3R), 030208, 2011 | 5 | 2011 |
| Methods for reducing body effect and increasing junction breakdown voltage CL Hsiung, F Toyama, M Higashitani US Patent 9,312,015, 2016 | 4 | 2016 |
| Non-volatile storage systems and methods CL Hsiung, F Toyama, M Dunga US Patent 9,449,701, 2016 | 1 | 2016 |
| Increased terrace configuration for non-volatile memory CL Hsiung, F Toyama, TY Tseng, Y Li US Patent 10,726,921, 2020 | | 2020 |
| Ohmic cathode electrode on the backside of nonpolar m-plane (1-100) and semipolar (20-21) bulk gallium nitride substrates CL Hsiung, YD Lin, H Ohta, SP DenBaars, S Nakamura US Patent App. 13/195,718, 2012 | | 2012 |
| Ohmic Backside Contact for Nonpolar/semipolar GaN-based Cleaved-facet Green Laser Diodes CL Hsiung University of California, Santa Barbara, 2010 | | 2010 |
| Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes YD Lin, S Yamamoto, CY Huang, CL Hsiung, F Wu, K Fujito, H Ohta, ... Applied Physics Express 3 (8), 2010 | | 2010 |
