Effects of annealing time on defect-controlled ferromagnetism in SJ Potashnik, KC Ku, SH Chun, JJ Berry, N Samarth, P Schiffer
Applied Physics Letters 79 (10), 1495-1497, 2001
479 2001 Highly enhanced Curie temperature in low-temperature annealed [Ga, Mn] As epilayers KC Ku, SJ Potashnik, RF Wang, SH Chun, P Schiffer, N Samarth, ...
Applied Physics Letters 82 (14), 2302-2304, 2003
459 2003 Junction leakage reduction in SiGe process by implantation CF Nieh, CH Chen, KC Ku, TL Lee, SC Chen
US Patent 7,482,211, 2009
263 2009 Saturated ferromagnetism and magnetization deficit in optimally annealed epilayers SJ Potashnik, KC Ku, R Mahendiran, SH Chun, RF Wang, N Samarth, ...
Physical Review B 66 (1), 012408, 2002
209 2002 Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions SH Chun, SJ Potashnik, KC Ku, P Schiffer, N Samarth
Physical Review B 66 (10), 100408, 2002
110 2002 Capping-induced suppression of annealing effects on epilayers MB Stone, KC Ku, SJ Potashnik, BL Sheu, N Samarth, P Schiffer
Applied physics letters 83 (22), 4568-4570, 2003
83 2003 Andreev reflection and pair-breaking effects at the superconductor/magnetic semiconductor interface RP Panguluri, KC Ku, T Wojtowicz, X Liu, JK Furdyna, YB Lyanda-Geller, ...
Physical Review B 72 (5), 054510, 2005
71 2005 Exchange biasing of the ferromagnetic semiconductor Ga1− xMnxAs KF Eid, MB Stone, KC Ku, O Maksimov, P Schiffer, N Samarth, TC Shih, ...
Applied physics letters 85 (9), 1556-1558, 2004
69 2004 Coercive field and magnetization deficit in epilayers SJ Potashnik, KC Ku, RF Wang, MB Stone, N Samarth, P Schiffer, ...
Journal of applied physics 93 (10), 6784-6786, 2003
51 2003 The Mass Production of BSI CMOS Image Sensors H Rhodes, D Tai, Y Qian, D Mao, V Venezia, W Zheng, Z Xiong, CY Liu, ...
International Image Sensor Workshop, 27-32, 2009
47 2009 Two-carrier transport in epitaxially grown MnAs JJ Berry, SJ Potashnik, SH Chun, KC Ku, P Schiffer, N Samarth
Physical Review B 64 (5), 052408, 2001
44 2001 Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/dielectrics: Enhanced performance at reduced gate leakage EP Gusev, C Cabral, BP Under, YH Kim, K Maitra, E Carrier, H Nayfeh, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 79-82, 2004
43 2004 Hybrid ferromagnetic/semiconductor heterostructures for spintronics N Samarth, SH Chun, KC Ku, SJ Potashnik, P Schiffer
Solid State Communications 127 (2), 173-179, 2003
43 2003 Method, apparatus and system for providing improved full well capacity in an image sensor pixel S Manabe, KC Ku, V Venezia, HC Tai, D Mao, HE Rhodes
US Patent 8,804,021, 2014
41 2014 Tunable anomalous Hall effect in a nonferromagnetic system J Cumings, LS Moore, HT Chou, KC Ku, G Xiang, SA Crooker, N Samarth, ...
Physical review letters 96 (19), 196404, 2006
41 2006 Effects of germanium and carbon coimplants on phosphorus diffusion in silicon KC Ku, CF Nieh, J Gong, LP Huang, YM Sheu, CC Wang, CH Chen, ...
Applied physics letters 89 (11), 2006
40 2006 Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs SH Chun, SJ Potashnik, KC Ku, JJ Berry, P Schiffer, N Samarth
Applied Physics Letters 78 (17), 2530-2532, 2001
38 2001 Junction leakage reduction in SiGe process by tilt implantation CF Nieh, KC Ku, CH Chen, H Chang, LT Wang, TL Lee
US Patent App. 11/607,326, 2007
30 2007 Partial buried channel transfer device for image sensors G Chen, SC Hu, HC Tai, D Mao, M Bikumandla, W Zheng, Y Qian, Z Xiong, ...
US Patent 9,698,185, 2017
27 2017 Pad design for circuit under pad in semiconductor devices Y Qian, HC Tai, KC Ku, V Venezia, D Mao, W Zheng, HE Rhodes
US Patent 8,569,856, 2013
26 2013