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Andrew Yu
Andrew Yu
Verified email at mit.edu
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Contact Engineering High-Performance n-Type MoTe2 Transistors
MJ Mleczko, AC Yu, CM Smyth, V Chen, YC Shin, S Chatterjee, YC Tsai, ...
Nano letters 19 (9), 6352-6362, 2019
1112019
Unipolar n-type black phosphorus transistors with low work function contacts
CH Wang, JAC Incorvia, CJ McClellan, AC Yu, MJ Mleczko, E Pop, ...
Nano letters 18 (5), 2822-2827, 2018
492018
Understanding metastability in SAR ADCs: part II: asynchronous
A Yu, D Bankman, K Zheng, B Murmann
IEEE Solid-State Circuits Magazine 11 (3), 16-32, 2019
292019
Heterogeneous Integration of BEOL Logic and Memory in a Commercial Foundry: Multi-Tier Complementary Carbon Nanotube Logic and Resistive RAM at a 130 nm node
T Srimani, G Hills, M Bishop, C Lau, P Kanhaiya, R Ho, A Amer, M Chao, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
242020
Carbon Nanotubes for Radiation-Tolerant Electronics
PS Kanhaiya, A Yu, R Netzer, W Kemp, D Doyle, MM Shulaker
ACS nano 15 (11), 17310-17318, 2021
122021
Understanding Metastability in SAR ADCs: Part I: Synchronous
D Bankman, A Yu, K Zheng, B Murmann
IEEE Solid-State Circuits Magazine 11 (2), 86-97, 2019
122019
Comprehensive Study on High Purity Semiconducting Carbon Nanotube Extraction
T Srimani, J Ding, A Yu, P Kanhaiya, C Lau, R Ho, J Humes, CT Kingston, ...
Advanced Electronic Materials 8 (9), 2101377, 2022
72022
Vertical Sidewall MoS2 Growth and Transistors
CJ McClellan, CY Andrew, CH Wang, HSP Wong, E Pop
2019 Device Research Conference (DRC), 65-66, 2019
72019
Lift-off-Free Complementary Carbon Nanotube FETs Fabricated With Conventional Processing in a Silicon Foundry
T Srimani, AC Yu, B Benton, M Nelson, MM Shulaker
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
42022
Foundry Integration of Carbon Nanotube FETs With 320 nm Contacted Gate Pitch Using New Lift-Off-Free Process
CY Andrew, T Srimani, C Lau, B Benton, M Nelson, MM Shulaker
IEEE Electron Device Letters 43 (3), 486-489, 2022
32022
Foundry Monolithic 3D BEOL Transistor+ Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+ RRAM vs. FEOL Silicon FET+ RRAM
T Srimani, AC Yu, RM Radway, DT Rich, M Nelson, S Wong, D Murphy, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
22023
Manufacturing Methodology for Carbon Nanotube Electronics
C Lau, G Hills, MD Bishop, T Srimani, R Ho, P Kanhaiya, A Yu, A Amer, ...
2020 International Symposium on VLSI Technology, Systems and Applications …, 2020
12020
N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+ Memory Ultra-Dense 3D, 3D Thermal Scaffolding
T Srimani, A Bechdolt, S Choi, C Gilardi, A Kasperovich, S Li, Q Lin, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
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