Giordano Scappucci
Giordano Scappucci
QuTech, TU Delft
Verified email at tudelft.nl
Title
Cited by
Cited by
Year
Strong spin-photon coupling in silicon
N Samkharadze, G Zheng, N Kalhor, D Brousse, A Sammak, UC Mendes, ...
Science 359 (6380), 1123-1127, 2018
1892018
Realization of atomically controlled dopant devices in silicon
FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ...
Small 3 (4), 563-567, 2007
1172007
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium
G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons
Nano letters, 2011
662011
Gate-controlled quantum dots and superconductivity in planar germanium
NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 1-7, 2018
582018
Fast two-qubit logic with holes in germanium
NW Hendrickx, DP Franke, A Sammak, G Scappucci, M Veldhorst
Nature 577 (7791), 487-491, 2020
542020
Ultradense phosphorus in germanium delta-doped layers
G Scappucci, G Capellini, WCT Lee, MY Simmons
Applied Physics Letters 94 (16), 162106, 2009
512009
Rapid gate-based spin read-out in silicon using an on-chip resonator
G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ...
Nature nanotechnology 14 (8), 742-746, 2019
50*2019
Exploring the limits of N-type ultra-shallow junction formation
CM Polley, WR Clarke, JA Miwa, G Scappucci, JW Wells, DL Jaeger, ...
ACS nano 7 (6), 5499-5505, 2013
452013
New avenues to an old material: controlled nanoscale doping of germanium
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanoscale 5 (7), 2600-2615, 2013
392013
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanotechnology 22 (37), 375203, 2011
392011
Preparation of the Ge (001) surface towards fabrication of atomic-scale germanium devices
WM Klesse, G Scappucci, G Capellini, MY Simmons
Nanotechnology 22 (14), 145604, 2011
322011
Atomic-scale silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, W Pok, T Hallam, MJ Butcher, ...
International journal of nanotechnology 5 (2-3), 352-369, 2008
322008
Influence of encapsulation temperature on Ge:P -doped layers
G Scappucci, G Capellini, MY Simmons
Physical Review B 80 (23), 233202, 2009
302009
Single-electron transistor based on modulation-doped SiGe heterostructures
A Notargiacomo, L Di Gaspare, G Scappucci, G Mariottini, F Evangelisti, ...
Applied physics letters 83 (2), 302-304, 2003
292003
Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology
A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
282019
Germanium quantum-well josephson field-effect transistors and interferometers
F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ...
Nano letters 19 (2), 1023-1027, 2019
272019
Quantum dot arrays in silicon and germanium
WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ...
Applied Physics Letters 116 (8), 080501, 2020
252020
Atomic-scale patterning of hydrogen terminated Ge (001) by scanning tunneling microscopy
G Scappucci, G Capellini, WCT Lee, MY Simmons
Nanotechnology 20 (49), 495302, 2009
252009
Phosphorus molecules on Ge (001): a playground for controlled n-doping of germanium at high densities
G Mattoni, WM Klesse, G Capellini, MY Simmons, G Scappucci
ACS nano 7 (12), 11310-11316, 2013
242013
Qubit device integration using advanced semiconductor manufacturing process technology
R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ...
2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018
232018
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