Giordano Scappucci
Giordano Scappucci
QuTech, TU Delft
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Cited by
Cited by
Strong spin-photon coupling in silicon
N Samkharadze, G Zheng, N Kalhor, D Brousse, A Sammak, UC Mendes, ...
Science 359 (6380), 1123-1127, 2018
Realization of atomically controlled dopant devices in silicon
FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ...
Small 3 (4), 563-567, 2007
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium
G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons
Nano letters, 2011
Ultradense phosphorus in germanium delta-doped layers
G Scappucci, G Capellini, WCT Lee, MY Simmons
Applied Physics Letters 94 (16), 162106, 2009
Gate-controlled quantum dots and superconductivity in planar germanium
NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 1-7, 2018
Exploring the limits of N-type ultra-shallow junction formation
CM Polley, WR Clarke, JA Miwa, G Scappucci, JW Wells, DL Jaeger, ...
ACS nano 7 (6), 5499-5505, 2013
Rapid gate-based spin read-out in silicon using an on-chip resonator
G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ...
Nature nanotechnology 14 (8), 742-746, 2019
Fast two-qubit logic with holes in germanium
NW Hendrickx, DP Franke, A Sammak, G Scappucci, M Veldhorst
Nature 577 (7791), 487-491, 2020
New avenues to an old material: controlled nanoscale doping of germanium
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanoscale 5 (7), 2600-2615, 2013
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanotechnology 22 (37), 375203, 2011
Preparation of the Ge (001) surface towards fabrication of atomic-scale germanium devices
WM Klesse, G Scappucci, G Capellini, MY Simmons
Nanotechnology 22 (14), 145604, 2011
Atomic-scale silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, W Pok, T Hallam, MJ Butcher, ...
International journal of nanotechnology 5 (2-3), 352-369, 2008
Influence of encapsulation temperature on Ge:P -doped layers
G Scappucci, G Capellini, MY Simmons
Physical Review B 80 (23), 233202, 2009
Single-electron transistor based on modulation-doped SiGe heterostructures
A Notargiacomo, L Di Gaspare, G Scappucci, G Mariottini, F Evangelisti, ...
Applied physics letters 83 (2), 302-304, 2003
Atomic-scale patterning of hydrogen terminated Ge (001) by scanning tunneling microscopy
G Scappucci, G Capellini, WCT Lee, MY Simmons
Nanotechnology 20 (49), 495302, 2009
Phosphorus molecules on Ge (001): a playground for controlled n-doping of germanium at high densities
G Mattoni, WM Klesse, G Capellini, MY Simmons, G Scappucci
ACS nano 7 (12), 11310-11316, 2013
Bottom-up assembly of metallic germanium
G Scappucci, WM Klesse, LRA Yeoh, DJ Carter, O Warschkow, NA Marks, ...
Scientific reports 5 (1), 1-7, 2015
Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture
SR McKibbin, G Scappucci, W Pok, MY Simmons
Nanotechnology 24 (4), 045303, 2013
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping
SR McKibbin, CM Polley, G Scappucci, JG Keizer, MY Simmons
Applied Physics Letters 104 (12), 123502, 2014
Stacking of 2D electron gases in Ge probed at the atomic-level and its correlation to low temperature magnetotransport.
G Scappucci, WM Klesse, AR Hamilton, GA Capellini, DL Jaeger, ...
Nano Letters, 2012
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