| Strong spin-photon coupling in silicon N Samkharadze, G Zheng, N Kalhor, D Brousse, A Sammak, UC Mendes, ... Science 359 (6380), 1123-1127, 2018 | 189 | 2018 |
| Realization of atomically controlled dopant devices in silicon FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ... Small 3 (4), 563-567, 2007 | 117 | 2007 |
| A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons Nano letters, 2011 | 66 | 2011 |
| Gate-controlled quantum dots and superconductivity in planar germanium NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ... Nature communications 9 (1), 1-7, 2018 | 58 | 2018 |
| Fast two-qubit logic with holes in germanium NW Hendrickx, DP Franke, A Sammak, G Scappucci, M Veldhorst Nature 577 (7791), 487-491, 2020 | 54 | 2020 |
| Ultradense phosphorus in germanium delta-doped layers G Scappucci, G Capellini, WCT Lee, MY Simmons Applied Physics Letters 94 (16), 162106, 2009 | 51 | 2009 |
| Rapid gate-based spin read-out in silicon using an on-chip resonator G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ... Nature nanotechnology 14 (8), 742-746, 2019 | 50* | 2019 |
| Exploring the limits of N-type ultra-shallow junction formation CM Polley, WR Clarke, JA Miwa, G Scappucci, JW Wells, DL Jaeger, ... ACS nano 7 (6), 5499-5505, 2013 | 45 | 2013 |
| New avenues to an old material: controlled nanoscale doping of germanium G Scappucci, G Capellini, WM Klesse, MY Simmons Nanoscale 5 (7), 2600-2615, 2013 | 39 | 2013 |
| Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers G Scappucci, G Capellini, WM Klesse, MY Simmons Nanotechnology 22 (37), 375203, 2011 | 39 | 2011 |
| Preparation of the Ge (001) surface towards fabrication of atomic-scale germanium devices WM Klesse, G Scappucci, G Capellini, MY Simmons Nanotechnology 22 (14), 145604, 2011 | 32 | 2011 |
| Atomic-scale silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, W Pok, T Hallam, MJ Butcher, ... International journal of nanotechnology 5 (2-3), 352-369, 2008 | 32 | 2008 |
| Influence of encapsulation temperature on Ge:P -doped layers G Scappucci, G Capellini, MY Simmons Physical Review B 80 (23), 233202, 2009 | 30 | 2009 |
| Single-electron transistor based on modulation-doped SiGe heterostructures A Notargiacomo, L Di Gaspare, G Scappucci, G Mariottini, F Evangelisti, ... Applied physics letters 83 (2), 302-304, 2003 | 29 | 2003 |
| Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ... Advanced Functional Materials 29 (14), 1807613, 2019 | 28 | 2019 |
| Germanium quantum-well josephson field-effect transistors and interferometers F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ... Nano letters 19 (2), 1023-1027, 2019 | 27 | 2019 |
| Quantum dot arrays in silicon and germanium WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ... Applied Physics Letters 116 (8), 080501, 2020 | 25 | 2020 |
| Atomic-scale patterning of hydrogen terminated Ge (001) by scanning tunneling microscopy G Scappucci, G Capellini, WCT Lee, MY Simmons Nanotechnology 20 (49), 495302, 2009 | 25 | 2009 |
| Phosphorus molecules on Ge (001): a playground for controlled n-doping of germanium at high densities G Mattoni, WM Klesse, G Capellini, MY Simmons, G Scappucci ACS nano 7 (12), 11310-11316, 2013 | 24 | 2013 |
| Qubit device integration using advanced semiconductor manufacturing process technology R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ... 2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018 | 23 | 2018 |
Giovanni CapelliniFull Professor, Experimental condensed matter Physics, Dip. di Scienze, Università Roma Tre e IHPVerified email at uniroma3.it
