Andrés Roldán Aranda
Andrés Roldán Aranda
Associate Professor of Electronics Engineering, University of Granada
Verified email at - Homepage
Cited by
Cited by
A SPICE compact model for unipolar RRAM reset process analysis
F Jiménez-Molinos, MA Villena, JB Roldán, AM Roldán
IEEE Transactions on Electron Devices 62 (3), 955-962, 2015
Correlation of plastic strain energy and acoustic emission energy in reinforced concrete structures
F Sagasta, A Benavent-Climent, A Roldán, A Gallego
Applied Sciences 6 (3), 84, 2016
Strained-Si on Si/sub 1-x/Ge/sub x/MOSFET mobility model
JB Roldan, F Gamiz, P Cartujo-Cassinello, P Cartujo, JE Carceller, ...
IEEE Transactions on Electron Devices 50 (5), 1408-1411, 2003
Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level
A Roldán, C Reig, MD Cubells-Beltrán, JB Roldán, D Ramírez, S Cardoso, ...
Solid-state electronics 54 (12), 1606-1612, 2010
In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs
JB Roldan, B Gonzalez, B Iniguez, AM Roldan, A Lazaro, A Cerdeira
Solid-state electronics 79, 179-184, 2013
Monitoring of carbon fiber-reinforced old timber beams via strain and multiresonant acoustic emission sensors
FJ Rescalvo, I Valverde-Palacios, E Suarez, A Roldán, A Gallego
Sensors 18 (4), 1224, 2018
An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
P González, MJ Ibáñez, AM Roldán, JB Roldán
Mathematics and Computers in Simulation 118, 248-257, 2015
An inversion-charge analytical model for square gate-all-around MOSFETs
EM Pérez, JBR Aranda, FJG Ruiz, DB Rosillo, MJI Pérez, A Godoy, ...
IEEE transactions on electron devices 58 (9), 2854-2861, 2011
Entropy analysis for damage quantification of hysteretic dampers used as seismic protection of buildings
E Suarez, A Roldán, A Gallego, A Benavent-Climent
Applied Sciences 7 (6), 628, 2017
A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
MJ Ibáñez, JB Roldán, AM Roldán, R Yáñez
Mathematics and Computers in Simulation 102, 1-10, 2014
Stability behavior of composite magnetorheological fluids by an induction method
GR Iglesias, A Roldán, L Reyes, L Rodríguez-Arco, JDG Durán
Journal of Intelligent Material Systems and Structures 26 (14), 1836-1843, 2015
Magnetic Tunnel Junction (MTJ) sensors for integrated circuits (IC) electric current measurement
MD Cubells, C Reig, A De Marcellis, A Roldan, JB Roldán, S Cardoso, ...
SENSORS, 2013 IEEE, 1-4, 2013
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation
AM Roldán, JB Roldán, C Reig, MD Cubells-Beltrán, D Ramírez, ...
Microelectronics Journal 42 (2), 365-370, 2011
A Space weather information service based upon remote and in-situ measurements of coronal mass ejections heading for Earth-A concept mission consisting of six spacecraft in a …
B Ritter, AJH Meskers, O Miles, M Rußwurm, S Scully, A Roldán, ...
Journal of Space Weather and Space Climate 5, A3, 2015
Vibration tests in CFRP plates for damage detection via non-parametric signal analysis
P Moreno-García, E Castro, L Romo-Melo, A Gallego, A Roldán
Shock and Vibration, 2012
Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories
D Maldonado, AM Roldán, MB González, F Jiménez-Molinos, ...
Microelectronic Engineering 215, 110983, 2019
Polynomial pattern finding in scattered data
D Barrera, MJ Ibáñez, AM Roldán, JB Roldán, R Yáñez
Journal of Computational and Applied Mathematics 318, 107-116, 2017
A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain
D Barrera, MJ Ibáñez, F Jiménez-Molinos, AM Roldán, JB Roldán
Journal of Computational and Applied Mathematics 354, 326-333, 2019
Quasi-static electrical model for magnetoresistive current sensors
A Roldán, C Reig, J Roldán, A Cano-Abellán, D Ramırez
International conference on renewable energies and power quality (ICREPQ’10 …, 2010
Simulation of CMOS inverters based on the novel Surrounding Gate Transistors. A Verilog-A implementation.
A Roldán, JB Roldán, F Gámiz
RN 50, 90nm, 2008
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