Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998 | 738 | 1998 |
Grating-coupling of surface plasmons onto metallic tips: a nanoconfined light source C Ropers, CC Neacsu, T Elsaesser, M Albrecht, MB Raschke, C Lienau Nano letters 7 (9), 2784-2788, 2007 | 637 | 2007 |
Catalytic activity of faceted gold nanoparticles studied by a model reaction: evidence for substrate-induced surface restructuring S Wunder, Y Lu, M Albrecht, M Ballauff Acs Catalysis 1 (8), 908-916, 2011 | 622 | 2011 |
Czochralski growth and characterization of β‐Ga2O3 single crystals Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ... Crystal Research and Technology 45 (12), 1229-1236, 2010 | 547 | 2010 |
Metals and ligand reactivity EC Constable, M Albrecht Ellis Horwood, 1990 | 512 | 1990 |
Systematic experimental and theoretical investigation of intersubband absorption in quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006 | 319 | 2006 |
Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016 | 310 | 2016 |
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ... physica status solidi (a) 211 (1), 27-33, 2014 | 245 | 2014 |
Strained state of Ge (Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements S Christiansen, M Albrecht, HP Strunk, HJ Maier Applied physics letters 64 (26), 3617-3619, 1994 | 236 | 1994 |
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ... Journal of Applied Physics 104 (9), 2008 | 231 | 2008 |
Nitride semiconductors P Ruterana, M Albrecht, J Neugebauer Handbook on Materials and Devices, 2003 | 231 | 2003 |
State of transition metal catalysts during carbon nanotube growth S Hofmann, R Blume, CT Wirth, M Cantoro, R Sharma, C Ducati, ... The Journal of Physical Chemistry C 113 (5), 1648-1656, 2009 | 205 | 2009 |
Electrical compensation by Ga vacancies in Ga2O3 thin films E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ... Applied Physics Letters 106 (24), 2015 | 202 | 2015 |
Properties of rare-earth scandate single crystals (Re= Nd− Dy) R Uecker, B Velickov, D Klimm, R Bertram, M Bernhagen, M Rabe, ... Journal of Crystal Growth 310 (10), 2649-2658, 2008 | 185 | 2008 |
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ... Journal of Crystal Growth 401, 665-669, 2014 | 184 | 2014 |
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ... Journal of Materials Science 51, 3650-3656, 2016 | 170 | 2016 |
FAIR data enabling new horizons for materials research M Scheffler, M Aeschlimann, M Albrecht, T Bereau, HJ Bungartz, C Felser, ... Nature 604 (7907), 635-642, 2022 | 166 | 2022 |
Phonons as probes in self-organized SiGe islands J Groenen, R Carles, S Christiansen, M Albrecht, W Dorsch, HP Strunk, ... Applied physics letters 71 (26), 3856-3858, 1997 | 158 | 1997 |
Microstructure of novel superhard nanocrystalline-amorphous composites as analyzed by high resolution transmission electron microscopy S Christiansen, M Albrecht, HP Strunk, S Veprek Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 154 | 1998 |
Stacking faults as quantum wells for excitons in wurtzite GaN YT Rebane, YG Shreter, M Albrecht physica status solidi (a) 164 (1), 141-144, 1997 | 154 | 1997 |