Fernando Ponce
Cited by
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Nitride-based semiconductors for blue and green light-emitting devices
FA Ponce, DP Bour
nature 386 (6623), 351-359, 1997
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
SD Lester, FA Ponce, MG Craford, DA Steigerwald
Applied Physics Letters 66 (10), 1249-1251, 1995
Defects in single-crystal silicon induced by hydrogenation
NM p Johnson, FA Ponce, RA Street, RJ Nemanich
Physical Review B 35 (8), 4166, 1987
Spatial distribution of the luminescence in GaN thin films
FA Ponce, DP Bour, W Götz, PJ Wright
Applied physics letters 68 (1), 57-59, 1996
Luminescence from stacking faults in gallium nitride
R Liu, A Bell, FA Ponce, CQ Chen, JW Yang, MA Khan
Applied Physics Letters 86 (2), 2005
Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires
HI Liu, DK Biegelsen, FA Ponce, NM Johnson, RFW Pease
Applied physics letters 64 (11), 1383-1385, 1994
Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
FA Ponce, DP Bour, WT Young, M Saunders, JW Steeds
Applied physics letters 69 (3), 337-339, 1996
Epitaxial MgO on Si (001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition
DK Fork, FA Ponce, JC Tramontana, TH Geballe
Applied Physics Letters 58 (20), 2294-2296, 1991
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
D Cherns, SJ Henley, FA Ponce
Applied Physics Letters 78 (18), 2691-2693, 2001
Solid State Light Emitting Device
FA Ponce, S Srinivasan, H Omiya
US Patent App. 11/886,027, 2009
Slip systems and misfit dislocations in InGaN epilayers
S Srinivasan, L Geng, R Liu, FA Ponce, Y Narukawa, S Tanaka
Applied Physics Letters 83 (25), 5187-5189, 2003
Microstructure of GaN epitaxy on SiC using AlN buffer layers
FA Ponce, BS Krusor, JS Major Jr, WE Plano, DF Welch
Applied physics letters 67 (3), 410-412, 1995
Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
FA Ponce, D Cherns, WT Young, JW Steeds
Applied physics letters 69 (6), 770-772, 1996
Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
S Choi, HJ Kim, SS Kim, J Liu, J Kim, JH Ryou, RD Dupuis, AM Fischer, ...
Applied Physics Letters 96 (22), 2010
Defects and interfaces in GaN epitaxy
FA Ponce
MRS bulletin 22 (2), 51-57, 1997
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
Self‐limiting oxidation of Si nanowires
HI Liu, DK Biegelsen, NM Johnson, FA Ponce, RFW Pease
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
Microstructure and electronic properties of InGaN alloys
FA Ponce, S Srinivasan, A Bell, L Geng, R Liu, M Stevens, J Cai, H Omiya, ...
physica status solidi (b) 240 (2), 273-284, 2003
Initial stages of epitaxial growth of GaAs on (100) silicon
DK Biegelsen, FA Ponce, AJ Smith, JC Tramontana
Journal of applied physics 61 (5), 1856-1859, 1987
Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
FA Ponce, JS Major Jr, WE Plano, DF Welch
Applied physics letters 65 (18), 2302-2304, 1994
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