| Short-channel effects in tunnel FETs J Wu, J Min, Y Taur IEEE Transactions on Electron Devices 62 (9), 3019-3024, 2015 | 106 | 2015 |
| Small molecule accurate recognition technology (SMART) to enhance natural products research C Zhang, Y Idelbayev, N Roberts, Y Tao, Y Nannapaneni, BM Duggan, ... Scientific reports 7 (1), 14243, 2017 | 92 | 2017 |
| A Short-Channel–Model for 2-D MOSFETs Y Taur, J Wu, J Min IEEE Transactions on Electron Devices 63 (6), 2550-2555, 2016 | 59 | 2016 |
| An analytic model for heterojunction tunnel FETs with exponential barrier Y Taur, J Wu, J Min IEEE Transactions on Electron Devices 62 (5), 1399-1404, 2015 | 54 | 2015 |
| Analysis of source doping effect in tunnel FETs with staggered bandgap J Min, J Wu, Y Taur IEEE Electron Device Letters 36 (10), 1094-1096, 2015 | 53 | 2015 |
| Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN S Gu, EA Chagarov, J Min, S Madisetti, S Novak, S Oktyabrsky, AJ Kerr, ... Applied surface science 317, 1022-1027, 2014 | 33 | 2014 |
| Dimensionality dependence of TFET performance down to 0.1 V supply voltage Y Taur, J Wu, J Min IEEE Transactions on Electron Devices 63 (2), 877-880, 2015 | 21 | 2015 |
| Projected performance of heterostructure tunneling FETs in low power microwave and mm-wave applications PM Asbeck, K Lee, J Min IEEE Journal of the Electron Devices Society 3 (3), 122-134, 2015 | 18 | 2015 |
| Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances X Wang, H Xu, J Min, LM Peng, JB Xu Nanoscale 5 (7), 2811-2817, 2013 | 13 | 2013 |
| Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz S Gu, J Min, Y Taur, PM Asbeck Solid-State Electronics 118, 18-25, 2016 | 11 | 2016 |
| Thermal resistance extraction of AlGaN/GaN depletion-mode HEMTs on diamond J Wu, J Min, W Lu, PKL Yu Journal of Electronic Materials 44, 1275-1280, 2015 | 10 | 2015 |
| Compact modeling of distributed effects in 2-D vertical tunnel FETs and their impact on DC and RF performances J Min, PM Asbeck IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017 | 6 | 2017 |
| An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states J Wu, J Min, J Ji, Y Taur 2015 73rd Annual Device Research Conference (DRC), 249-250, 2015 | 4 | 2015 |
| Super-linear rectifying property of rubrene single crystal devices C Wang, X Wang, J Min, N Zhao, J Xu Organic Electronics 12 (10), 1731-1735, 2011 | 4 | 2011 |
| Analysis of Temperature Dependent Effects on I–V Characteristics of Heterostructure Tunnel Field Effect Transistors J Min, LD Wang, J Wu, PM Asbeck IEEE Journal of the Electron Devices Society 4 (6), 416-423, 2016 | 3 | 2016 |
| Physical and compact modeling of vertical and lateral tunnel field effect transistors J Min University of California, San Diego, 2017 | 2 | 2017 |
| Author Correction: Small Molecule Accurate Recognition Technology (SMART) to Enhance Natural Products Research C Zhang, Y Idelbayev, N Roberts, Y Tao, Y Nannapaneni, BM Duggan, ... Scientific reports 10, 2020 | 1 | 2020 |
| Small Molecule Accurate Recognition Technology (SMART) to Enhance Natural Products Research (vol 7, 14243, 2017) C Zhang, Y Idelbayev, N Roberts, Y Tao, Y Nannapaneni, BM Duggan, ... SCIENTIFIC REPORTS 10 (1), 2020 | | 2020 |
