Follow
David A. Browne
David A. Browne
Google Quantum AI
Verified email at google.com
Title
Cited by
Cited by
Year
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
DA Browne, EC Young, JR Lang, CA Hurni, JS Speck
Journal of Vacuum Science & Technology A 30 (4), 2012
1102012
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ...
Applied Physics Letters 106 (18), 2015
1092015
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy
DA Browne, B Mazumder, YR Wu, JS Speck
Journal of Applied Physics 117 (18), 2015
802015
pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ...
Applied Physics Letters 97 (22), 2010
582010
Effect of doping on the intersubband absorption in Si-and Ge-doped GaN/AlN heterostructures
A Ajay, CB Lim, DA Browne, J Polaczyński, E Bellet-Amalric, J Bleuse, ...
Nanotechnology 28 (40), 405204, 2017
312017
Intersubband absorption in Si‐and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers
A Ajay, CB Lim, DA Browne, J Polaczynski, E Bellet‐Amalric, ...
physica status solidi (b) 254 (8), 1600734, 2017
302017
Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures
CB Lim, A Ajay, C Bougerol, J Lähnemann, F Donatini, J Schörmann, ...
Nanotechnology 27 (14), 145201, 2016
282016
Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition
DA Browne, MN Fireman, B Mazumder, LY Kuritzky, YR Wu, JS Speck
Semiconductor Science and Technology 32 (2), 025010, 2017
152017
Templated epitaxial coatings on magnesium aluminate spinel using the sol-gel method
D Browne, H Li, E Giorgi, S Dutta, J Biser, RP Vinci, HM Chan
Journal of materials science 44 (5), 1180-1186, 2009
152009
Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy
MN Fireman, DA Browne, B Mazumder, JS Speck, UK Mishra
Applied Physics Letters 106 (20), 2015
142015
Near-and mid-infrared intersubband absorption in top-down GaN/AlN nano-and micro-pillars
J Lähnemann, DA Browne, A Ajay, M Jeannin, A Vasanelli, JL Thomassin, ...
Nanotechnology 30 (5), 054002, 2018
62018
Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy
MN Fireman, DA Browne, UK Mishra, JS Speck
Journal of Applied Physics 119 (5), 2016
62016
Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation
YR Wu, CK Wu, CK Li, DA Browne, JS Speck
Conference on Lasers and Electro-Optics/Pacific Rim, 25H2_2, 2015
32015
Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers
R Yeluri, J Lu, D Browne, CA Hurni, S Chowdhury, S Keller, JS Speck, ...
72nd Device Research Conference, 253-254, 2014
32014
Intersubband Optoelectronics Using III-Nitride Semiconductors
CB Lim, A Ajay, J Lähnemann, DA Browne, E Monroy
Handbook of GaN Semiconductor Materials and Devices, 615-644, 2017
12017
III-Nitride Nanostructures for Intersubband Optoelectronics
CB Lim, A Ajay, J Lähnemann, DA Browne, E Monroy
III-Nitride Materials Devices and Nano-Structures, 77-113, 2017
12017
Intersubband transitions in the THz using GaN quantum wells (Conference Presentation)
CB Lim, A Ajay, C Bougerol, J Schörmann, DA Browne, M Beeler, ...
Gallium Nitride Materials and Devices XII 10104, 49-49, 2017
2017
Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber
H Machhadani, J Zichi, C Bougerol, S Lequien, N Mollard, A Mukhtarova, ...
2017
Growth and Carrier Transport Studies of III-Nitride Alloys by Ammonia Molecular Beam Epitaxy
DA Browne
University of California, Santa Barbara, 2015
2015
Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE
D Browne, E Young, J Speck
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011
2011
The system can't perform the operation now. Try again later.
Articles 1–20