| Atomic and electronic structures of GaAs (110) and their alkali-adsorption-induced changes J Hebenstreit, M Heinemann, M Scheffler Physical review letters 67 (8), 1031, 1991 | 113 | 1991 |
| A pilot study of the KIBO robot in children with severe ASD J Albo-Canals, AB Martelo, E Relkin, D Hannon, M Heerink, ... International Journal of Social Robotics 10, 371-383, 2018 | 62 | 2018 |
| Magnetic structures of hcp bulk gadolinium M Heinemann, WM Temmerman Physical Review B 49 (6), 4348, 1994 | 61 | 1994 |
| Young Modulus of Crystalline Polyethylene from ab Initio Molecular Dynamics JCL Hageman, RJ Meier, M Heinemann, RA De Groot Macromolecules 30 (19), 5953-5957, 1997 | 55 | 1997 |
| Electronic structure of β-PbO 2 and its relation with BaPbO 3 M Heinemann, HJ Terpstra, C Haas, RA De Groot Physical Review B 52 (16), 11740, 1995 | 42 | 1995 |
| Microscopic Properties of Thin Films: Learning About Point Defects A Ourmazd, M Scheffler, M Heinemann, JL Rouviere MRS Bulletin 17 (12), 24-32, 1992 | 13 | 1992 |
| LSDA calculations for magnetic structures of Gd bulk and the Gd (0001) surface M Heinemann, WM Temmerman Surface science 307, 1121-1123, 1994 | 11 | 1994 |
| Formation energies and abundances of intrinsic point defects at the GaAs/AlAs (100) interface M Heinemann, M Scheffler Applied surface science 56, 628-631, 1992 | 7 | 1992 |
| Thick sodium overlayers on GaAs (110) M Heinemann, M Scheffler Physical Review B 49 (8), 5516, 1994 | 6 | 1994 |
| Aluminum break-point contacts M Heinemann, RA De Groot Physical Review B 55 (15), 9375, 1997 | 4 | 1997 |
| Electronic structure of -PbO~ 2 and its relation with BaPbO~ 3 M Heinemann, HJ Terpstra, C Haas, RA De Groot PHYSICAL REVIEW-SERIES B- 52, 11 740-11 740, 1995 | 4 | 1995 |
| The occupation of the two charge states of EL2 in LEC-grown GaAs-Wafers-a mapping investigation M Heinemann, BK Meyer, JM Spaeth, K Löhnert Defect Recognition and Image Processing in III-V Compounds II, 1987 | 4 | 1987 |
| Proceedings of the Twentieth International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 1990 J Hebenstreit, M Heinemann, M Scheffler World Scientific, Singapore, 1990 | 2 | 1990 |
| FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs (110) FROM THE LOW TO THE HIGH COVERAGE REGIME M Heinemann Surface Review and Letters 1 (04), 429-433, 1994 | | 1994 |
| The formation of a Schottky barrier: Na on GaAs (110) M Heinemann, M Scheffler Formation Of Semiconductor Interfaces-Proceedings Of The 4th International …, 1994 | | 1994 |
| MICROSCOPIC PROPERTIES OF THIN-FILMS-LEARNING ABOUT POINT-DEFECTS (VOL 17, PG 24, 1992) A OURMAZD, M SCHEFFLER, M HEINEMANN, JL ROUVIERE MRS BULLETIN 18 (1), 7-7, 1993 | | 1993 |
| Elektronische und atomare Struktur von GaAs/AlAs-Grenzflächen M Heinemann TU Berlin, 1991 | | 1991 |
| Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs (110) Surfaces J Hebenstreit, M Heinemann, M Scheffler, JR Hayes, MS Hybertsen, ... Extended Abstract: Electronic, Optical and Device Properties of Layered …, 1990 | | 1990 |
| Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs (110) J Hebenstreit, M Heinemann, M Scheffler, EM Anastassakis, ... Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), 215-218, 1990 | | 1990 |
| Is it real? Dealing with an insecure perception of a pet robot in dementia care M Heinemann, MV Soler, M Heerink Conference Proceedings New Friends 2015, 0 | | |
