Aaron Gin
Aaron Gin
Attorney, McDonnell Boehnen Hulbert & Berghoff LLP
Verified email at - Homepage
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Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
Y Wei, A Gin, M Razeghi, GJ Brown
Applied Physics Letters 81 (19), 3675-3677, 2002
Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
Y Wei, A Gin, M Razeghi, GJ Brown
Applied physics letters 80 (18), 3262-3264, 2002
Uncooled operation of type-II InAs∕ GaSb superlattice photodiodes in the midwavelength infrared range
Y Wei, A Hood, H Yau, A Gin, M Razeghi, MZ Tidrow, V Nathan
Applied Physics Letters 86 (23), 2005
Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
A Gin, Y Wei, A Hood, A Bajowala, V Yazdanpanah, M Razeghi, M Tidrow
Applied physics letters 84 (12), 2037-2039, 2004
Growth, defect formation, and morphology control of germanium–silicon semiconductor nanowire heterostructures
SA Dayeh, J Wang, N Li, JY Huang, AV Gin, ST Picraux
Nano letters 11 (10), 4200-4206, 2011
An alternative geometry for quantum-dot cellular automata
A Gin, PD Tougaw, S Williams
Journal of Applied Physics 85 (12), 8281-8286, 1999
Passivation of type II InAs/GaSb superlattice photodiodes
A Gin, Y Wei, J Bae, A Hood, J Nah, M Razeghi
Thin Solid Films 447, 489-492, 2004
Two-color multi-section quantum dot distributed feedback laser
NA Naderi, F Grillot, K Yang, JB Wright, A Gin, LF Lester
Optics express 18 (26), 27028-27035, 2010
Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport
SA Dayeh, AV Gin, ST Picraux
Applied Physics Letters 98 (16), 2011
High quality type II InAs/GaSb superlattices with cutoff wavelength∼ 3.7 μm using interface engineering
Y Wei, J Bae, A Gin, A Hood, M Razeghi, GJ Brown, M Tidrow
Journal of Applied Physics 94 (7), 4720-4722, 2003
Hierarchical design of quantum-dot cellular automata devices
A Gin, S Williams, H Meng, PD Tougaw
Journal of Applied Physics 85 (7), 3713-3720, 1999
Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs
M Razeghi, Y Wei, J Bae, A Gin, A Hood, J Jiang, J Nah
Active and Passive Optical Components for Wdm Communications Iii 5246, 501-511, 2003
Doping tunable resonance: Toward electrically tunable mid-infrared metamaterials
X Miao, B Passmore, A Gin, W Langston, S Vangala, W Goodhue, ...
Applied Physics Letters 96 (10), 2010
Interaction between metamaterial resonators and intersubband transitions in semiconductor quantum wells
A Gabbay, J Reno, JR Wendt, A Gin, MC Wanke, MB Sinclair, E Shaner, ...
Applied Physics Letters 98 (20), 2011
Few-layer graphene characterization by near-field scanning microwave microscopy
VV Talanov, CD Barga, L Wickey, I Kalichava, E Gonzales, EA Shaner, ...
Acs Nano 4 (7), 3831-3838, 2010
High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays
M Razeghi, Y Wei, A Gin, A Hood, V Yazdanpanah, MZ Tidrow, V Nathan
Infrared Technology and Applications XXXI 5783, 86-97, 2005
Type-II InAs/GaSb superlattices and detectors with lambda c> 18m
M Razeghi, Y Wei, A Gin, GJ Brown, DK Johnstone
Photodetector Materials and Devices VII 4650, 111-116, 2002
Recent advances in InAs/GaSb superlattices for very long wavelength infrared detection
GJ Brown, F Szmulowicz, K Mahalingam, S Houston, Y Wei, A Gin, ...
Quantum Sensing: Evolution and Revolution from Past to Future 4999, 457-466, 2003
Infrared detection from GaInAs/InP nanopillar arrays
A Gin, B Movaghar, M Razeghi, GJ Brown
Nanotechnology 16 (9), 1814, 2005
Quantum sensing using Type II InAs/GaSb superlattice for infrared detection
M Razeghi, A Gin, Y Wei, J Bae, J Nah
Microelectronics journal 34 (5-8), 405-410, 2003
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