Siddharth Rajan
Siddharth Rajan
Electrical and Computer Engineering, Ohio State University
Verified email at - Homepage
Cited by
Cited by
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit
DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ...
Nano letters 18 (5), 3125-3131, 2018
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
p-type doping of MoS2 thin films using Nb
MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ...
Applied Physics Letters 104 (9), 2014
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ...
Applied Physics Letters 99 (23), 2011
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors
S Rajan, A Chini, MH Wong, JS Speck, UK Mishra
Journal of Applied Physics 102 (4), 2007
Large area single crystal (0001) oriented MoS2
MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ...
Applied Physics Letters 102 (25), 2013
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ...
Applied Physics Letters 110 (22), 2017
Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs
T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ...
IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2004
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan
Applied Physics Letters 99 (13), 2011
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems
M Su, C Chen, S Rajan
Semiconductor Science and Technology 28 (7), 074012, 2013
Polarization-engineered GaN/InGaN/GaN tunnel diodes
S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan
Applied Physics Letters 97 (20), 2010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan
Applied Physics Letters 100 (11), 2012
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