| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 112 | 2021 |
| Analysis of the Switching Variability in -Based RRAM Devices MB Gonzalez, JM Rafí, O Beldarrain, M Zabala, F Campabadal IEEE Transactions on Device and Materials Reliability 14 (2), 769-771, 2014 | 88 | 2014 |
| Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 2014 | 71 | 2014 |
| A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ... Journal of Physics D: Applied Physics 50 (33), 335103, 2017 | 66 | 2017 |
| Nanobeam diffraction: Technique evaluation and strain measurement on complementary metal oxide semiconductor devices P Favia, MB Gonzales, E Simoen, P Verheyen, D Klenov, H Bender Journal of The Electrochemical Society 158 (4), H438, 2011 | 62 | 2011 |
| Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ... Journal of Physics D: Applied Physics 53 (22), 225106, 2020 | 53 | 2020 |
| An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ... Solid-State Electronics 111, 47-51, 2015 | 53 | 2015 |
| In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures G Gonzalez-Cordero, F Jiménez-Molinos, JB Roldán, MB González, ... Journal of Vacuum Science & Technology B 35 (1), 2017 | 50 | 2017 |
| Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming S Poblador, MB Gonzalez, F Campabadal Microelectronic Engineering 187, 148-153, 2018 | 42 | 2018 |
| A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs MA Villena, JB Roldán, MB González, P González-Rodelas, ... Solid-State Electronics 118, 56-60, 2016 | 37 | 2016 |
| A physically based model for resistive memories including a detailed temperature and variability description G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ... Microelectronic Engineering 178, 26-29, 2017 | 36 | 2017 |
| Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ... IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017 | 32 | 2017 |
| Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source … H García, H Castán, S Dueñas, L Bailón, F Campabadal, O Beldarrain, ... Journal of Vacuum Science & Technology A 31 (1), 2013 | 30 | 2013 |
| High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ... Journal of The Electrochemical Society 158 (5), R27, 2011 | 29 | 2011 |
| High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ... Journal of The Electrochemical Society 158 (5), R27, 2011 | 29 | 2011 |
| Unpredictable bits generation based on RRAM parallel configuration D Arumí, Á Gómez-Pau, S Manich, R Rodríguez-Montañés, MB González, ... IEEE Electron Device Letters 40 (2), 341-344, 2018 | 28 | 2018 |
| Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM S Claramunt, Q Wu, M Maestro, M Porti, MB Gonzalez, J Martin-Martinez, ... Microelectronic Engineering 147, 335-338, 2015 | 28 | 2015 |
| Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant MB González, JM Rafí, O Beldarrain, M Zabala, F Campabadal Journal of Vacuum Science & Technology B 31 (1), 2013 | 28 | 2013 |
| Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures O Beldarrain, M Duch, M Zabala, JM Rafí, MB González, F Campabadal Journal of Vacuum Science & Technology A 31 (1), 2013 | 27 | 2013 |
| Is there an impact of threading dislocations on the characteristics of devices fabricated in strained‐Ge substrates? E Simoen, G Brouwers, R Yang, G Eneman, MB Gonzalez, F Leys, ... physica status solidi c 6 (8), 1912-1917, 2009 | 26 | 2009 |
