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Mireia Bargalló Gonzalez
Mireia Bargalló Gonzalez
Institut de Microelectrònica de Barcelona IMB-CNM (CSIC)
Verified email at csic.es
Title
Cited by
Cited by
Year
Analysis of the Switching Variability in -Based RRAM Devices
MB Gonzalez, JM Rafí, O Beldarrain, M Zabala, F Campabadal
IEEE Transactions on Device and Materials Reliability 14 (2), 769-771, 2014
822014
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 214504, 2014
652014
Nanobeam diffraction: Technique evaluation and strain measurement on complementary metal oxide semiconductor devices
P Favia, MB Gonzales, E Simoen, P Verheyen, D Klenov, H Bender
Journal of The Electrochemical Society 158 (4), H438, 2011
612011
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
532017
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
482015
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
472017
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ...
Journal of Physics D: Applied Physics 53 (22), 225106, 2020
352020
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs
MA Villena, JB Roldán, MB González, P González-Rodelas, ...
Solid-State Electronics 118, 56-60, 2016
352016
Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming
S Poblador, MB Gonzalez, F Campabadal
Microelectronic Engineering 187, 148-153, 2018
332018
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
312021
A physically based model for resistive memories including a detailed temperature and variability description
G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ...
Microelectronic Engineering 178, 26-29, 2017
312017
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source …
H García, H Castán, S Dueñas, L Bailón, F Campabadal, O Beldarrain, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1 …, 2013
282013
Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures
O Beldarrain, M Duch, M Zabala, JM Rafí, MB González, F Campabadal
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1 …, 2013
272013
Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant
MB González, JM Rafí, O Beldarrain, M Zabala, F Campabadal
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
272013
High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions
E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ...
Journal of The Electrochemical Society 158 (5), R27, 2011
272011
High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions
E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ...
Journal of The Electrochemical Society 158 (5), R27, 2011
272011
Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ...
IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017
262017
Is there an impact of threading dislocations on the characteristics of devices fabricated in strained‐Ge substrates?
E Simoen, G Brouwers, R Yang, G Eneman, MB Gonzalez, F Leys, ...
physica status solidi c 6 (8), 1912-1917, 2009
262009
Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM
S Claramunt, Q Wu, M Maestro, M Porti, MB Gonzalez, J Martin-Martinez, ...
Microelectronic Engineering 147, 335-338, 2015
252015
Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation
M Maestro-Izquierdo, MB Gonzalez, F Jimenez-Molinos, E Moreno, ...
Nanotechnology 31 (13), 135202, 2020
242020
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Articles 1–20