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Pulkit Agarwal
Pulkit Agarwal
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Title
Cited by
Cited by
Year
Substrate support apparatus having reduced substrate particle generation
P Agarwal, SM Suh, G Mori, SV Sansoni
US Patent 10,431,489, 2019
4132019
Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
J Abel, P Agarwal, R Phillips, P Kumar, A Lavoie
US Patent 10,269,559, 2019
3232019
Sectional modeling of nanoparticle size and charge distributions in dusty plasmas
P Agarwal, SL Girshick
Plasma Sources Science and Technology 21 (5), 055023, 2012
632012
Numerical Modeling of an RF Argon–Silane Plasma with Dust Particle Nucleation and Growth
P Agarwal, SL Girshick
Plasma Chemistry and Plasma Processing 34 (3), 489-503, 2014
582014
Homogeneous nucleation with magic numbers: Aluminum
SL Girshick, P Agarwal, DG Truhlar
The Journal of chemical physics 131 (13), 2009
442009
Atomic layer etch methods and hardware for patterning applications
P Agarwal, P Kumar, A Lavoie
US Patent 9,997,371, 2018
322018
Atomic layer etch, reactive precursors and energetic sources for patterning applications
A Lavoie, P Agarwal, P Kumar
US Patent 10,832,909, 2020
262020
Atomic layer clean for removal of photoresist patterning scum
P Agarwal, P Kumar, A Lavoie
US Patent 10,494,715, 2019
132019
Substrate transfer robot end effector
P Agarwal, D Greenberg, SM Suh, J Brodine, SV Sansoni, G Mori
US Patent 9,425,076, 2016
132016
Cleaning of chamber components with solid carbon dioxide particles
SM Suh, Y Guo, G Xuan, P Agarwal
US Patent 9,925,639, 2018
112018
Chemical kinetics of photoinduced chemical vapor deposition: silica coating of gas-phase nanoparticles
AM Boies, S Calder, P Agarwal, P Lei, SL Girshick
The Journal of Physical Chemistry C 116 (1), 104-114, 2012
72012
Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation
C Qu, Y Sakiyama, P Agarwal, MJ Kushner
Journal of Vacuum Science & Technology A 39 (5), 2021
42021
Conical wafer centering and holding device for semiconductor processing
P Agarwal, I Karim, P Kumar, A Lavoie, SJ Kim, P Breiling
US Patent 10,655,224, 2020
42020
Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
JR Abel, P Agarwal, R Phillips, P Kumar, A Lavoie
US Patent 10,658,172, 2020
42020
Numerical modeling of plasmas in which nanoparticles nucleate and grow
P Agarwal
University of Minnesota, 2012
42012
Method of providing a plasma atomic layer deposition
P Agarwal, P Kumar, A Lavoie
US Patent App. 15/974,500, 2019
32019
Numerical simulations of nanodusty RF plasmas
P Agarwal, SL Girshick
IEEE Transactions on Plasma Science 39 (11), 2760-2761, 2011
32011
Multi zone substrate support for ALD film property correction and tunability
MP Roberts, R Chandrasekharan, P Agarwal, A Bingham, A Saurabh, ...
US Patent 11,236,422, 2022
22022
Density Functional‐Based Tight‐Binding Simulations of Pristine and Aluminum‐Modified Silica
A Dernov, Z Tong, R Kumar, P Agarwal, T Frauenheim, T Dumitrică
Advanced Theory and Simulations 5 (10), 2200284, 2022
12022
Trim and deposition profile control with multi-zone heated substrate support for multi-patterning processes
R Chandrasekharan, MP Roberts, P Agarwal, A Lavoie, R Kumar, ...
US Patent App. 17/429,882, 2022
12022
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