| Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999 | 3720 | 1999 |
| Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000 | 2124 | 2000 |
| Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998 | 807 | 1998 |
| The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998 | 557 | 1998 |
| Undoped AlGaN/GaN HEMTs for microwave power amplification LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ... IEEE Transactions on Electron Devices 48 (3), 479-485, 2001 | 468 | 2001 |
| Monlithically coupled waveguide and phototransistor YK Chen, VE Houtsma, AB Leven, NG Weimann US Patent 7,471,855, 2008 | 246 | 2008 |
| GaN nanotip pyramids formed by anisotropic etching HM Ng, NG Weimann, A Chowdhury Journal of applied physics 94 (1), 650-653, 2003 | 225 | 2003 |
| Second-harmonic generation in periodically poled GaN A Chowdhury, HM Ng, M Bhardwaj, NG Weimann Applied physics letters 83 (6), 1077-1079, 2003 | 206 | 2003 |
| Role of spontaneous and piezoelectric polarization induced effects in Group‐III nitride based heterostructures and devices O Ambacher, R Dimitrov, M Stutzmann, BE Foutz, MJ Murphy, JA Smart, ... physica status solidi (b) 216 (1), 381-389, 1999 | 202 | 1999 |
| AlGaN/GaN heterostructures on insulating AlGaN nucleation layers JA Smart, AT Schremer, NG Weimann, O Ambacher, LF Eastman, ... Applied physics letters 75 (3), 388-390, 1999 | 117 | 1999 |
| High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, S Syed, ... Journal of applied physics 92 (1), 338-345, 2002 | 104 | 2002 |
| SiGe differential transimpedance amplifier with 50-GHz bandwidth JS Weiner, A Leven, V Houtsma, Y Baeyens, YK Chen, P Paschke, ... IEEE Journal of Solid-State Circuits 38 (9), 1512-1517, 2003 | 102 | 2003 |
| Patterning GaN microstructures by polarity-selective chemical etching HM Ng, W Parz, NG Weimann, A Chowdhury Japanese Journal of Applied Physics 42 (12A), L1405, 2003 | 74 | 2003 |
| Compact InP-based HBT VCOs with a wide tuning range at W-and D-band Y Baeyens, C Dorschky, N Weimann, Q Lee, R Kopf, G Georgiou, ... IEEE Transactions on Microwave Theory and Techniques 48 (12), 2403-2408, 2000 | 74 | 2000 |
| Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy O Mitrofanov, M Manfra, N Weimann Applied physics letters 82 (24), 4361-4363, 2003 | 70 | 2003 |
| An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth JS Weiner, JS Lee, A Leven, Y Baeyens, V Houtsma, G Georgiou, Y Yang, ... IEEE journal of solid-state circuits 39 (10), 1720-1723, 2004 | 64 | 2004 |
| High-reflectivity ultraviolet AlGaN∕ AlGaN distributed Bragg reflectors O Mitrofanov, S Schmult, MJ Manfra, T Siegrist, NG Weimann, AM Sergent, ... Applied physics letters 88 (17), 2006 | 59 | 2006 |
| Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, SNG Chu Applied physics letters 81 (8), 1456-1458, 2002 | 55 | 2002 |
| Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates NG Weimann, MJ Manfra, T Wachtler IEEE Electron Device Letters 24 (2), 57-59, 2003 | 52 | 2003 |
| Toward mobile integrated electronic systems at THz frequencies P Hillger, M van Delden, USM Thanthrige, AM Ahmed, J Wittemeier, ... Journal of Infrared, Millimeter, and Terahertz Waves 41 (7), 846-869, 2020 | 51 | 2020 |
