| Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts Ş Karataş, Ş Altındal, A Türüt, A Özmen Applied surface science 217 (1-4), 250-260, 2003 | 303 | 2003 |
| The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes Ş Altındal, S Karadeniz, N Tuğluoğlu, A Tataroğlu Solid-State Electronics 47 (10), 1847-1854, 2003 | 254 | 2003 |
| Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure A Tataroglu, Ş Altındal, MM Bülbül Microelectronic engineering 81 (1), 140-149, 2005 | 211 | 2005 |
| Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes İ Dökme, Ş Altındal, T Tunç, İ Uslu Microelectronics Reliability 50 (1), 39-44, 2010 | 149 | 2010 |
| Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures S Zeyrek, Ş Altındal, H Yüzer, MM Bülbül Applied Surface Science 252 (8), 2999-3010, 2006 | 149 | 2006 |
| Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Al/SiO2/p-Si (MIS) Schottky diodes A Tataroğlu, Ş Altındal Microelectronic engineering 83 (3), 582-588, 2006 | 145 | 2006 |
| Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements Ş Karataş, Ş Altındal, A Türüt, M Çakar Physica B: Condensed Matter 392 (1-2), 43-50, 2007 | 144 | 2007 |
| Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Al/SiO2/p-Si (MIS) Schottky diodes A Tataroğlu, Ş Altındal Microelectronic engineering 83 (3), 582-588, 2006 | 144 | 2006 |
| Frequency and voltage effects on the dielectric properties and electrical conductivity of Al–TiW–Pd2Si/n-Si structures IM Afandiyeva, İ Dökme, Ş Altındal, MM Bülbül, A Tataroğlu Microelectronic Engineering 85 (2), 247-252, 2008 | 139 | 2008 |
| The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range Ş Altındal, İ Dökme, MM Bülbül, N Yalçın, T Serin Microelectronic engineering 83 (3), 499-505, 2006 | 131 | 2006 |
| Current transport in Zn/p-Si (1 0 0) Schottky barrier diodes at high temperatures Ş Karataş, Ş Altındal, M Çakar Physica B: Condensed Matter 357 (3-4), 386-397, 2005 | 121 | 2005 |
| Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes M Özer, DE Yıldız, Ş Altındal, MM Bülbül Solid-State Electronics 51 (6), 941-949, 2007 | 119 | 2007 |
| Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures E Arslan, Ş Altındal, S Özçelik, E Ozbay Journal of Applied Physics 105 (2), 2009 | 114 | 2009 |
| The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures O Pakma, N Serin, T Serin, Ş Altındal Journal of Applied Physics 104 (1), 2008 | 114 | 2008 |
| The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures Ş Altındal, H Uslu Journal of Applied Physics 109 (7), 2011 | 112 | 2011 |
| The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer İ Taşçıoğlu, U Aydemir, Ş Altındal Journal of Applied Physics 108 (6), 2010 | 111 | 2010 |
| Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range Ş Karataş, Ş Altındal Materials Science and Engineering: B 122 (2), 133-139, 2005 | 110 | 2005 |
| Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs (1 1 0) schottky barrier diodes Y Şafak-Asar, T Asar, Ş Altındal, S Özçelik Journal of Alloys and Compounds 628, 442-449, 2015 | 105 | 2015 |
| The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes H Kanbur, Ş Altındal, A Tataroğlu applied surface science 252 (5), 1732-1738, 2005 | 104 | 2005 |
| On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs) H Tecimer, H Uslu, ZA Alahmed, F Yakuphanoğlu, Ş Altındal Composites Part B: Engineering 57, 25-30, 2014 | 102 | 2014 |
