| An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ... IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014 | 109 | 2014 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 2013 | 93 | 2013 |
| An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains S Jahdi, O Alatise, C Fisher, L Ran, P Mawby IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 517-528, 2014 | 82 | 2014 |
| Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ... IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017 | 71 | 2017 |
| Enhanced field effect mobility on 4H-SiC by oxidation at 1500 C SM Thomas, YK Sharma, MA Crouch, CA Fisher, A Perez-Tomas, ... IEEE Journal of the Electron Devices Society 2 (5), 114-117, 2014 | 37 | 2014 |
| Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors SM Thomas, MR Jennings, YK Sharma, CA Fisher, P Mawby Materials Science Forum 778, 599-602, 2014 | 31 | 2014 |
| High-temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs DP Hamilton, MR Jennings, A Pérez-Tomás, SAO Russell, SA Hindmarsh, ... IEEE Transactions on Power Electronics 32 (10), 7967-7979, 2016 | 30 | 2016 |
| Cryogenic characterization of commercial SiC power MOSFETs H Chen, PM Gammon, VA Shah, CA Fisher, CW Chan, S Jahdi, ... Materials Science Forum 821, 777-780, 2015 | 21 | 2015 |
| On The Schottky Barrier Height Lowering Effect of Ti3SiC2 in Ohmic Contacts to P-Type 4H-SiC: Nanophysics CA Fisher, MR Jennings, YK Sharma, A Sanchez-Fuentes, D Walker, ... International Journal of Fundamental Physical Sciences 4 (3), 95-100, 2014 | 21 | 2014 |
| Status and prospects of cubic silicon carbide power electronics device technology F Li, F Roccaforte, G Greco, P Fiorenza, F La Via, A Pérez-Tomas, ... Materials 14 (19), 5831, 2021 | 20 | 2021 |
| High-temperature (1200–1400° C) dry oxidation of 3C-SiC on silicon YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ... Journal of Electronic Materials 44, 4167-4174, 2015 | 20 | 2015 |
| On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ... Materials Science Forum 778, 693-696, 2014 | 20 | 2014 |
| Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors A Fontsere, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Nanotechnology 23 (39), 395204, 2012 | 18 | 2012 |
| Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process CA Fisher, MR Jennings, YK Sharma, DP Hamilton, PM Gammon, ... IEEE transactions on semiconductor manufacturing 27 (3), 443-451, 2014 | 17 | 2014 |
| A study of temperature-related non-linearity at the metal-silicon interface PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ... Journal of Applied Physics 112 (11), 2012 | 17 | 2012 |
| 3C-SiC transistor with ohmic contacts defined at room temperature F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ... IEEE Electron Device Letters 37 (9), 1189-1192, 2016 | 16 | 2016 |
| Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor A Pérez-Tomás, G Catalan, A Fontserè, V Iglesias, H Chen, PM Gammon, ... Nanotechnology 26 (11), 115203, 2015 | 16 | 2015 |
| Electrical activation of nitrogen heavily implanted 3C-SiC (1 0 0) F Li, Y Sharma, V Shah, M Jennings, A Pérez-Tomás, M Myronov, ... Applied Surface Science 353, 958-963, 2015 | 14 | 2015 |
| A first evaluation of thick oxide 3C-SiC MOS capacitors reliability F Li, Q Song, A Perez-Tomas, V Shah, Y Sharma, D Hamilton, C Fisher, ... IEEE Transactions on Electron Devices 67 (1), 237-242, 2019 | 10 | 2019 |
| Evaluation of commercially available SiC devices and packaging materials for operation up to 350 C D Hamilton, M Jennings, Y Sharma, C Fisher, O Alatise, P Mawby 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 4381-4387, 2014 | 9 | 2014 |
phil mawbyprofessor of power electronics, School of Engineering, university of warwick, UKGeverifieerd e-mailadres voor warwick.ac.uk
