| 2D materials for spintronic devices EC Ahn npj 2D Materials and Applications 4 (1), 17, 2020 | 347 | 2020 |
| Selective metal deposition at graphene line defects by atomic layer deposition K Kim, HBR Lee, RW Johnson, JT Tanskanen, N Liu, MG Kim, C Pang, ... Nature communications 5 (1), 4781, 2014 | 286 | 2014 |
| Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier C Ahn, SW Fong, Y Kim, S Lee, A Sood, CM Neumann, M Asheghi, ... Nano Letters 15 (10), 6809-6814, 2015 | 156 | 2015 |
| Emerging nanoelectronic devices A Chen, J Hutchby, V Zhirnov, G Bourianoff John Wiley & Sons, 2014 | 125 | 2014 |
| Carbon nanomaterials for non-volatile memories EC Ahn, HSP Wong, E Pop Nature Reviews Materials 3 (3), 1-15, 2018 | 103 | 2018 |
| Stanford memory trends HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ... tech. report, 2016 | 58 | 2016 |
| Vertical and Lateral Copper Transport through Graphene Layers L Li, X Chen, CH Wang, J Cao, S Lee, A Tang, C Ahn, SS Roy, MS Arnold, ... ACS Nano 9 (8), 8361–8367, 2015 | 48 | 2015 |
| 1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays C Ahn, Z Jiang, CS Lee, HY Chen, J Liang, LS Liyayanage, HSP Wong Electron Devices, IEEE Transactions on 62 (7), 2197 - 2204, 2015 | 40 | 2015 |
| Phonon conduction in silicon nanobeam labyrinths W Park, G Romano, EC Ahn, T Kodama, J Park, MT Barako, J Sohn, ... Scientific reports 7 (1), 6233, 2017 | 39 | 2017 |
| Impact of thermally dead volume on phonon conduction along silicon nanoladders W Park, J Sohn, G Romano, T Kodama, A Sood, JS Katz, BSY Kim, H So, ... Nanoscale 10 (23), 11117-11122, 2018 | 31 | 2018 |
| Current-perpendicular-to-plane spin transport properties of CoFe alloys: Spin diffusion length and scattering asymmetry C Ahn, KH Shin, R Loloee, J Bass, WP Pratt Journal of Applied Physics 108 (2), 2010 | 30 | 2010 |
| iCELIA: A full-stack framework for STT-MRAM-based deep learning acceleration H Yan, HR Cherian, EC Ahn, X Qian, L Duan IEEE Transactions on Parallel and Distributed Systems 31 (2), 408-422, 2019 | 23 | 2019 |
| Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage C Ahn, B Lee, RGD Jeyasingh, M Asheghi, GAM Hurkx, KE Goodson, ... Journal of Applied Physics 110 (11), 2011 | 22 | 2011 |
| Temperature-dependent studies of the electrical properties and the conduction mechanism of HfOx-based RRAM C Ahn, S Kim, T Gokmen, O Dial, M Ritter, HSP Wong Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014 | 19 | 2014 |
| Ballistic quantum transport in nanoscale Schottky-barrier tunnel transistors C Ahn, M Shin IEEE transactions on nanotechnology 5 (3), 278-283, 2006 | 19 | 2006 |
| Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ... 2016 IEEE international electron devices meeting (IEDM), 21.3. 1-21.3. 4, 2016 | 18 | 2016 |
| Celia: A device and architecture co-design framework for stt-mram-based deep learning acceleration H Yan, HR Cherian, EC Ahn, L Duan Proceedings of the 2018 International Conference on Supercomputing, 149-159, 2018 | 17 | 2018 |
| Magnetotransport properties of CoFeB and Co∕ Ru interfaces in the current-perpendicular-to-plane geometry C Ahn, KH Shin, WP Pratt Applied Physics Letters 92 (10), 2008 | 16 | 2008 |
| Molecularly imprinted polymers via reversible addition–fragmentation chain-transfer synthesis in sensing and environmental applications IV Martínez, JI Ek, EC Ahn, AO Sustaita RSC advances 12 (15), 9186-9201, 2022 | 13 | 2022 |
| Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory C Ahn, B Lee, RGD Jeyasingh, M Asheghi, F Hurkx, KE Goodson, ... Japanese Journal of Applied Physics 51 (2), 02BD06, 2012 | 10 | 2012 |
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityGeverifieerd e-mailadres voor stanford.edu
