Gerrit Lükens
Gerrit Lükens
pmdtechnologies ag, Siegen
Geverifieerd e-mailadres voor cst.rwth-aachen.de
Geciteerd door
Geciteerd door
Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance
H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan
Applied Physics Express 4 (11), 114102, 2011
First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
H Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan
72nd Device Research Conference, 259-260, 2014
Self-aligned process for selectively etched p-GaN-gated AlGaN/GaN-on-Si HFETs
G Lükens, H Hahn, H Kalisch, A Vescan
IEEE Transactions on Electron Devices 65 (9), 3732-3738, 2018
Effect of carbon doping level on static and dynamic properties of AlGaN/GaN heterostructures grown on silicon
H Yacoub, T Zweipfennig, G Lükens, H Behmenburg, D Fahle, ...
IEEE Transactions on Electron Devices 65 (8), 3192-3198, 2018
Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0)
B Reuters, J Strate, A Wille, M Marx, G Lükens, L Heuken, M Heuken, ...
Journal of Physics D: Applied Physics 48 (48), 485103, 2015
Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation
L Redaelli, H Wenzel, J Piprek, T Weig, S Einfeldt, M Martens, G Lükens, ...
IEEE Journal of Quantum Electronics 51 (8), 1-6, 2015
Gallium nitride laser diodes with integrated absorber: on the dynamics of self‐pulsation
K Holc, G Lükens, T Weig, K Köhler, J Wagner, UT Schwarz
physica status solidi (c) 11 (3‐4), 670-673, 2014
Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments
G Lükens, H Yacoub, H Kalisch, A Vescan
Journal of Applied Physics 119 (20), 2016
Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes
T Weig, G Lükens, K Holc, K Köhler, J Wagner, UT Schwarz
Novel In-Plane Semiconductor Lasers XIII 9002, 62-71, 2014
3D integrated 300° C tunable RF oscillator exploiting AlGaN/GaN HEMT for high temperature applications
P Palacios, T Zweipfennig, A Ottaviani, M Saeed, C Beckmann, M Alomari, ...
2021 IEEE MTT-S International Microwave Symposium (IMS), 519-522, 2021
Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by …
L Heuken, A Ottaviani, D Fahle, T Zweipfennig, G Lükens, H Kalisch, ...
physica status solidi (a) 217 (7), 1900697, 2020
Normally-off transistor topologies in gallium nitride technology
G Lükens
Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2020, 2020
Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses
H Hahn, H Yacoub, T Zweipfennig, G Lukens, S Kotzea, A Debald, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
L Redaelli, H Wenzel, T Weig, G Lükens, S Einfeldt, UT Schwarz, ...
CLEO: Science and Innovations, CF1F. 3, 2013
GaN and III-V Devices
SE Harrison, Q Shao, CD Frye, LF Voss, RJ Nikolić, J Wang, L Cao, J Xie, ...
Het systeem kan de bewerking nu niet uitvoeren. Probeer het later opnieuw.
Artikelen 1–15