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Wolfgang M. Klesse
Wolfgang M. Klesse
Verified email at ihp-microelectronics.com
Title
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Cited by
Year
A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium
G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons
Nano Letters 11 (6), 2272-2279, 2011
812011
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 2019
592019
New avenues to an old material: controlled nanoscale doping of germanium
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanoscale 5 (7), 2600-2615, 2013
512013
Preparation of the Ge (001) surface towards fabrication of atomic-scale germanium devices
WM Klesse, G Scappucci, G Capellini, MY Simmons
Nanotechnology 22 (14), 145604, 2011
442011
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanotechnology 22 (37), 375203, 2011
382011
Decoupling of graphene from Ni (111) via formation of an interfacial NiO layer
Y Dedkov, W Klesse, A Becker, F Späth, C Papp, E Voloshina
Carbon 121, 10-16, 2017
372017
Compositional dependence of the band-gap of Ge1− x− ySixSny alloys
T Wendav, IA Fischer, M Montanari, MH Zoellner, W Klesse, G Capellini, ...
Applied Physics Letters 108 (24), 2016
312016
Bottom-up assembly of metallic germanium
G Scappucci, WM Klesse, LRA Yeoh, DJ Carter, O Warschkow, NA Marks, ...
Scientific reports 5 (1), 12948, 2015
282015
Phosphorus molecules on Ge (001): a playground for controlled n-doping of germanium at high densities
G Mattoni, WM Klesse, G Capellini, MY Simmons, G Scappucci
ACS nano 7 (12), 11310-11316, 2013
282013
Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Physical Review Letters 112 (23), 236602, 2014
242014
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si (001): A comprehensive analysis
CL Manganelli, M Virgilio, O Skibitzki, M Salvalaglio, D Spirito, P Zaumseil, ...
Journal of Raman Spectroscopy 51 (6), 989-996, 2020
232020
Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport
G Scappucci, WM Klesse, AR Hamilton, G Capellini, DL Jaeger, ...
Nano letters 12 (9), 4953-4959, 2012
232012
Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers
E Calandrini, T Venanzi, F Appugliese, M Badioli, V Giliberti, ...
Applied Physics Letters 109 (12), 2016
212016
-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level
G Scappucci, O Warschkow, G Capellini, WM Klesse, DR McKenzie, ...
Physical Review Letters 109 (7), 076101, 2012
212012
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
WM Klesse, G Scappucci, G Capellini, JM Hartmann, MY Simmons
Applied Physics Letters 102 (15), 2013
202013
Dual-temperature encapsulation of phosphorus in germanium δ‐layers toward ultra-shallow junctions
G Scappucci, G Capellini, WM Klesse, MY Simmons
Journal of Crystal Growth 316 (1), 81-84, 2011
172011
Nanoscale mapping of the 3D strain tensor in a germanium quantum well hosting a functional spin qubit device
C Corley-Wiciak, C Richter, MH Zoellner, I Zaitsev, CL Manganelli, ...
ACS applied materials & interfaces 15 (2), 3119-3130, 2023
162023
Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Scientific Reports 7 (1), 46670, 2017
142017
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer
N Taoka, G Capellini, N von den Driesch, D Buca, P Zaumseil, ...
Applied Physics Express 9 (3), 031201, 2016
132016
Photoluminescence from GeSn nano-heterostructures
V Schlykow, P Zaumseil, MA Schubert, O Skibitzki, Y Yamamoto, ...
Nanotechnology 29 (41), 415702, 2018
102018
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