| Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes K Fu, H Fu, X Huang, TH Yang, CY Cheng, PR Peri, H Chen, J Montes, ... IEEE Journal of the Electron Devices Society 8, 74-83, 2020 | 56 | 2020 |
| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 25 | 2021 |
| Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing C Yang, H Fu, P Peri, K Fu, TH Yang, J Zhou, J Montes, DJ Smith, Y Zhao IEEE Electron Device Letters 42 (8), 1128-1131, 2021 | 24 | 2021 |
| The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ... Applied Physics Letters 118 (22), 2021 | 19 | 2021 |
| Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 EM Cornuelle, TA Growden, DF Storm, ER Brown, W Zhang, BP Downey, ... AIP Advances 10 (5), 2020 | 11 | 2020 |
| Structural breakdown in high power GaN-on-GaN pn diode devices stressed to failure P Peri, K Fu, H Fu, Y Zhao, DJ Smith Journal of Vacuum Science & Technology A 38 (6), 2020 | 6 | 2020 |
| Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire DF Storm, TA Growden, EM Cornuelle, PR Peri, T Osadchy, JW Daulton, ... Journal of Vacuum Science & Technology B 38 (3), 2020 | 6 | 2020 |
| Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices P Peri, K Fu, H Fu, Y Zhao, DJ Smith Journal of Electronic Materials 50, 2637-2642, 2021 | 5 | 2021 |
| Structural, electrical, and electromagnetic properties of nanostructured vanadium dioxide thin films G Subramanyam, E Shin, PR Peri, R Katiyar, G Naziripour, S Dey Thin Film Nanophotonics, 65-90, 2021 | 3 | 2021 |
| Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes P Peri, K Fu, H Fu, J Zhou, Y Zhao, DJ Smith Journal of Electronic Materials 52 (5), 3343-3351, 2023 | 1 | 2023 |
| Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power pn Diodes PR Peri, K Hatch, D Messina, K Fu, Y Zhao, R Nemanich, D Smith Microscopy and Microanalysis 26 (S2), 840-842, 2020 | 1 | 2020 |
| Electron Microscopy Characterization of GaN-on-GaN Vertical Power Devices PR Peri Arizona State University, 2021 | | 2021 |
| Characterization of Etched and Grown GaN-GaN Schottky Diodes P Peri, K Fu, Y Zhao, DJ Smith Microscopy and Microanalysis 25 (S2), 2240-2241, 2019 | | 2019 |
| Physicochemical Characterization of PZT-Based Ultrasonic Transducer Stacks PR Peri Arizona State University, 2018 | | 2018 |
