MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 147 | 2018 |
Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy Z Zhao, M Jamali, AK Smith, JP Wang Applied Physics Letters 106 (13), 2015 | 132 | 2015 |
2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 102 | 2019 |
Fast magnetoelectric device based on current-driven domain wall propagation JP Wang, M Jamali, SS Sapatnekar, MG Mankalale, Z Liang, AK Smith, ... US Patent 10,217,522, 2019 | 62 | 2019 |
External‐field‐free spin Hall switching of perpendicular magnetic nanopillar with a dipole‐coupled composite structure Z Zhao, AK Smith, M Jamali, JP Wang Advanced Electronic Materials 6 (5), 1901368, 2020 | 58 | 2020 |
Precessional magnetization induced spin current from CoFeB into Ta M Jamali, A Klemm, JP Wang Applied Physics Letters 103 (25), 2013 | 34 | 2013 |
Probing dipole coupled nanomagnets using magnetoresistance read A Lyle, A Klemm, J Harms, Y Zhang, H Zhao, JP Wang Applied Physics Letters 98 (9), 2011 | 33 | 2011 |
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 23 | 2020 |
Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model J Kim, H Zhao, Y Jiang, A Klemm, JP Wang, CH Kim 72nd Device Research Conference, 155-156, 2014 | 22 | 2014 |
Spin transfer torque programming dipole coupled nanomagnet arrays A Lyle, J Harms, T Klein, A Lentsch, D Martens, A Klemm, JP Wang Applied Physics Letters 100 (1), 2012 | 22 | 2012 |
Integration of spintronic interface for nanomagnetic arrays A Lyle, J Harms, T Klein, A Lentsch, A Klemm, D Martens, JP Wang AIP Advances 1 (4), 2011 | 18 | 2011 |
Planar Hall effect based characterization of spin orbital torques in Ta/CoFeB/MgO structures M Jamali, Z Zhao, M DC, D Zhang, H Li, AK Smith, JP Wang Journal of Applied Physics 119 (13), 2016 | 15 | 2016 |
Nonreciprocal behavior of the spin pumping in ultra-thin film of CoFeB M Jamali, AK Smith, JP Wang Journal of Applied Physics 119 (13), 2016 | 13 | 2016 |
A fast magnetoelectric device based on current-driven domain wall propagation MG Mankalale, Z Liang, AK Smith, DC Mahendra, M Jamali, JP Wang, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 11 | 2016 |
External field free spin Hall effect device for perpendicular magnetization reversal using a composite structure with biasing layer AK Smith, M Jamali, Z Zhao, JP Wang arXiv preprint arXiv:1603.09624, 2016 | 11 | 2016 |
Spin transfer torque random access memory JP Wang, M Jamali, A Klemm, H Meng Emerging Nanoelectronic Devices, 56-77, 2014 | 11 | 2014 |
Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory T Gosavi, S Manipatruni, CC Lin, K Oguz, C Wiegand, A Smith, N Sato, ... US Patent 11,374,164, 2022 | 10 | 2022 |
Magnetic tunnel junction based integrated logics and computational circuits JP Wang, M Jamaliz, AK Smith, Z Zhao Nanomagnetic and Spintronic Devices for Energy‐Efficient Memory and …, 2016 | 9 | 2016 |
Spin orbit torque memory devices and methods of fabrication K O'brien, C Wiegand, T Rahman, N Sato, G Allen, J Pellegren, A Smith, ... US Patent 11,276,730, 2022 | 8 | 2022 |
Spin orbit torque memory devices and methods of fabrication T Rahman, J Pellegren, A Smith, C Wiegand, N Sato, T Gosavi, ... US Patent 11,062,752, 2021 | 8 | 2021 |