Romano Hoofman
Romano Hoofman
Strategic Development Director at imec
Verified email at imec.be
Title
Cited by
Cited by
Year
Highly mobile electrons and holes on isolated chains of the semiconducting polymer poly (phenylene vinylene)
RJOM Hoofman, MP De Haas, LDA Siebbeles, JM Warman
Nature 392 (6671), 54-56, 1998
3551998
Semiconductor device and method of manufacturing thereof
A Humbert, R Hoofman
US Patent App. 12/514,214, 2010
1632010
Challenges in the implementation of low-k dielectrics in the back-end of line
R Hoofman, G Verheijden, J Michelon, F Iacopi, Y Travaly, MR Baklanov, ...
Microelectronic Engineering 80, 337-344, 2005
1252005
The formation and recombination kinetics of positively charged poly (phenylene vinylene) chains in pulse-irradiated dilute solutions
FC Grozema, RJOM Hoofman, LP Candeias, MP de Haas, JM Warman, ...
The Journal of Physical Chemistry A 107 (31), 5976-5986, 2003
692003
Moisture influence on porous low-k reliability
J Michelon, RJOM Hoofman
IEEE Transactions on Device and Materials Reliability 6 (2), 169-174, 2006
602006
Anisotropy of the charge-carrier mobility in polydiacetylene crystals
RJOM Hoofman, LDA Siebbeles, MP de Haas, A Hummel, D Bloor
The Journal of chemical physics 109 (5), 1885-1893, 1998
451998
Advanced Cu interconnects using air gaps
LG Gosset, A Farcy, J De Pontcharra, P Lyan, R Daamen, G Verheijden, ...
Microelectronic engineering 82 (3-4), 321-332, 2005
412005
Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process
VH Nguyen, R Daamen, R Hoofman
Microelectronic Engineering 76 (1-4), 95-99, 2004
392004
Etch and strip induced material modification of porous low-k (k= 2.2) dielectric
Y Furukawa, R Wolters, H Roosen, JHM Snijders, R Hoofman
Microelectronic engineering 76 (1-4), 25-31, 2004
382004
CMOS biosensor platform
F Widdershoven, D Van Steenwinckel, J Überfeld, T Merelle, H Suy, ...
2010 International Electron Devices Meeting, 36.1. 1-36.1. 4, 2010
312010
The evolution of multi-level air gap integration towards 32 nm node interconnects
R Daamen, PHL Bancken, VH Nguyen, A Humbert, G Verheijden, ...
Microelectronic engineering 84 (9-10), 2177-2183, 2007
302007
Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects
Z Tokei, V Sutcliffe, S Demuynck, F Iacopi, P Roussel, GP Beyer, ...
2004 IEEE International Reliability Physics Symposium. Proceedings, 326-332, 2004
252004
General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material
LG Gosset, V Arnal, C Prindle, R Hoofman, G Verheijden, R Daamen, ...
Proceedings of the IEEE 2003 International Interconnect Technology …, 2003
252003
Influence of backbone conformation on the photoconductivity of polydiacetylene chains
RJOM Hoofman, GH Gelinck, LDA Siebbeles, MP de Haas, JM Warman, ...
Macromolecules 33 (25), 9289-9297, 2000
242000
Humidity sensor based on progressive corrosion of exposed material
A Humbert, YV Ponomarev, M Merz, R Hoofman
US Patent 8,683,861, 2014
212014
Air gap formation by UV-assisted decomposition of CVD material
M Pantouvaki, A Humbert, E VanBesien, E Camerotto, Y Travaly, ...
Microelectronic Engineering 85 (10), 2071-2074, 2008
212008
Supramolecular Photosensitive and Electroactive Materials
H Zuilhof, HM Barentsen, M Van Dijk, EJR Sudhölter, R Hoofman, ...
by HS Nalwa, Academic Press, New York, 339, 2001
212001
Prediction of thermo-mechanical integrity of wafer backend processes
V Gonda, JMJ Den Toonder, J Beijer, GQ Zhang, WD van Driel, ...
Microelectronics Reliability 44 (12), 2011-2017, 2004
182004
Void growth modeling upon electromigration stressing in narrow copper lines
D Tio Castro, R Hoofman, J Michelon, DJ Gravesteijn, C Bruynseraede
Journal of Applied Physics 102 (12), 123515, 2007
172007
Intrusion protection using stress changes
R Hoofman, RHW Pijnenburg, YV Ponomarev
US Patent 8,330,191, 2012
162012
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