| Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress P Samanta, KC Mandal Journal of Applied Physics 121 (3), 2017 | 39 | 2017 |
| Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress P Samanta Solid-State Electronics 43 (9), 1677-1687, 1999 | 31 | 1999 |
| Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling P Samanta, KC Mandal Solid-State Electronics 114, 60-68, 2015 | 28 | 2015 |
| Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks P Samanta, CL Cheng, YJ Lee, M Chan Journal of applied physics 105 (12), 2009 | 26 | 2009 |
| Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices under Fowler–Nordheim stress P Samanta Applied physics letters 75 (19), 2966-2968, 1999 | 23 | 1999 |
| Analysis of positive charge trapping in silicon dioxide of MOS capacitors during Fowler-Nordheim stress P Samanta, CK Sarkar Solid-State Electronics 41 (3), 459-464, 1997 | 19 | 1997 |
| Coupled charge trapping dynamics in thin gate oxide under Fowler–Nordheim stress at low electron fluence P Samanta, CK Sarkar Journal of applied physics 83 (5), 2662-2669, 1998 | 18 | 1998 |
| Direct tunneling stress-induced leakage current in ultrathin HfO2∕ SiO2 gate dielectric stacks P Samanta, TY Man, Q Zhang, C Zhu, M Chan Journal of applied physics 100 (9), 2006 | 17 | 2006 |
| On the electrical stress-induced oxide-trapped charges in thin HfO2∕ SiO2 gate dielectric stack P Samanta, C Zhu, M Chan Applied physics letters 91 (11), 2007 | 15 | 2007 |
| Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack P Samanta, C Zhu, M Chan Microelectronic engineering 84 (9-10), 1964-1967, 2007 | 15 | 2007 |
| Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks P Samanta, C Zhu, M Chan Microelectronics Reliability 50 (12), 1907-1914, 2010 | 14 | 2010 |
| Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler–Nordheim stress P Samanta, CK Sarkar Solid-State Electronics 46 (2), 279-285, 2002 | 13 | 2002 |
| Hole trapping in thin gate oxides during Fowler-Nordheim constant current stress P Samanta, CK Sarkar Semiconductor science and technology 11 (2), 181, 1996 | 13 | 1996 |
| Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures P Samanta, HS Huang, SY Chen, TJ Tzeng, MC Wang Applied Physics Letters 100 (20), 2012 | 12 | 2012 |
| Charge Trapping Related Degradation of Thin HfAlO∕ SiO2 Gate Dielectric Stack during Constant-Voltage Stress P Samanta, CL Cheng, YJ Lee Journal of The Electrochemical Society 156 (8), H661, 2009 | 12 | 2009 |
| Simulation of temperature dependent dielectric breakdown in n+-polySi/SiO2/n-6H-SiC structures during Poole-Frenkel stress at positive gate bias P Samanta, KC Mandal Journal of Applied Physics 120 (6), 2016 | 10 | 2016 |
| Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures P Samanta Journal of Applied Physics 122 (9), 2017 | 9 | 2017 |
| Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics P Samanta, TY Man, ACK Chan, Q Zhang, C Zhu, M Chan Semiconductor science and technology 21 (10), 1393, 2006 | 9 | 2006 |
| Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack P Samanta, CL Cheng, YJ Lee, M Chan Microelectronic engineering 86 (7-9), 1767-1770, 2009 | 7 | 2009 |
| Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC P Samanta, KC Mandal Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII 9968, 44-55, 2016 | 6 | 2016 |
