Hiroaki Ohta (太田裕朗)

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Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerified email at engineering.ucsb.edu
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
Satoshi HamaguchiOsaka University, Kyoto University, IBM, University of Texas at Austin, New York UniversityVerified email at ppl.eng.osaka-u.ac.jp
Kate M Kelchner, PhDMeta Reality LabsVerified email at ece.ucsb.edu
Koji EriguchiKyoto UniversityVerified email at kyoto-u.ac.jp
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–MadisonVerified email at wisc.edu
Matthew T. HardyElectronics Science and Technology Division, Naval Research LaboratoryVerified email at nrl.navy.mil
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of PhotonicsVerified email at nycu.edu.tw
Dan HaegerAppleVerified email at apple.com
Masashi "Mac" KubotaMurata Electronics North America, Inc.Verified email at kk.alumni.u-tokyo.ac.jp
Ingrid KoslowMaterials Department, University of California Santa BarbaraVerified email at umail.ucsb.edu
Erin C. YoungUniversity of California, Santa BarbaraVerified email at engineering.ucsb.edu
Alexander SzteinUniversity of California, Santa BarbaraVerified email at umail.ucsb.edu
Yuji ZhaoAssociate Professor, Electrical and Computer Engineering, Rice UniversityVerified email at rice.edu
Asahiko MatsudaNational Institute for Materials ScienceVerified email at nims.go.jp
Chia-Lin (Irene) HsiungSanDiskVerified email at sandisk.com
John BowersProfessor of Electrical and Computer Engineering, UCSBVerified email at ece.ucsb.edu
Akira IWAKAWAPale Blue, Inc.Verified email at nagoya-u.jp
Marcinkevicius SauliusKTH Royal Institute of TechnologyVerified email at kth.se
Roy B. ChungKyungpook National UniversityVerified email at knu.ac.kr

Hiroaki Ohta (太田裕朗)

Waseda Univeristy Ventures, ex-Kyoto University, UCSB

Verified email at waseda.vc

Physics Materials Semiconductor Plasma Nuclear Fusion


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Semiconductor laser diode H Ohta, K Okamoto US Patent 7,843,980, 2010	305	2010
Light-emitting device K Okamoto, H Ohta US Patent 8,017,932, 2011	297	2011
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ... US Patent 9,077,151, 2015	263	2015
Light emitting device K Okamoto, H Ohta US Patent App. 12/076,762, 2008	263	2008
Semiconductor light-emitting element and method for fabrication the same K Okamoto, H Ohta US Patent 8,124,982, 2012	256	2012
Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011	251	2011
Vertical GaN-based trench gate metal oxide semiconductor field-effect transistors on GaN bulk substrates H Otake, K Chikamatsu, A Yamaguchi, T Fujishima, H Ohta Applied physics express 1 (1), 011105, 2008	241	2008
Molecular dynamics evaluation of self-diffusion in Yukawa systems H Ohta, S Hamaguchi Physics of Plasmas 7 (11), 4506-4514, 2000	209	2000
Wave dispersion relations in Yukawa fluids H Ohta, S Hamaguchi Physical review letters 84 (26), 6026, 2000	196	2000
Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes K Okamoto, H Ohta, SF Chichibu, J Ichihara, H Takasu Japanese journal of applied physics 46 (3L), L187, 2007	176	2007
Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystals K Okamoto, H Ohta, D Nakagawa, M Sonobe, J Ichihara, H Takasu Japanese journal of applied physics 45 (11L), L1197, 2006	171	2006
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar GaN free standing substrates A Tyagi, F Wu, EC Young, A Chakraborty, H Ohta, R Bhat, K Fujito, ... Applied Physics Letters 95 (25), 251905, 2009	134	2009
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... Applied Physics Express 3 (1), 011002, 2009	121	2009
Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams H Ohta, S Hamaguchi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (5 …, 2001	118	2001
GaN-based trench gate metal oxide semiconductor field effect transistors with over 100 cm2/(V s) channel mobility H Otake, S Egami, H Ohta, Y Nanishi, H Takasu Japanese Journal of Applied Physics 46 (7L), L599, 2007	102	2007
Classical interatomic potentials for Si–O–F and Si–O–Cl systems H Ohta, S Hamaguchi The Journal of Chemical Physics 115 (14), 6679-6690, 2001	102	2001
30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique Y Zhao, J Sonoda, CC Pan, S Brinkley, I Koslow, K Fujito, H Ohta, ... Applied physics express 3 (10), 102101, 2010	99	2010
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on -plane GaN F Wu, YD Lin, A Chakraborty, H Ohta, SP DenBaars, S Nakamura, ... Applied Physics Letters 96 (23), 231912, 2010	99	2010
Temperature dependence of polarized photoluminescence from nonpolar -plane InGaN multiple quantum wells for blue laser diodes M Kubota, K Okamoto, T Tanaka, H Ohta Applied Physics Letters 92 (1), 011920, 2008	97	2008
High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes YD Lin, S Yamamoto, CY Huang, CL Hsiung, F Wu, K Fujito, H Ohta, ... Applied Physics Express 3 (8), 082001, 2010	95	2010

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