| Field-effect transistors built from all two-dimensional material components T Roy, M Tosun, JS Kang, AB Sachid, SB Desai, M Hettick, CC Hu, ... ACS nano 8 (6), 6259-6264, 2014 | 763 | 2014 |
| Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ... ACS nano 9 (2), 2071-2079, 2015 | 676 | 2015 |
| The Role of Graphene and Other 2D Materials in Solar Photovoltaics S Das, D Pandey, J Thomas, T Roy Advanced Materials 31 (1), 1802722, 2019 | 384 | 2019 |
| 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures T Roy, M Tosun, M Hettick, GH Ahn, C Hu, A Javey Applied Physics Letters 108 (8), 083111, 2016 | 313 | 2016 |
| Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment M Tosun, L Chan, M Amani, T Roy, GH Ahn, P Taheri, C Carraro, JW Ager, ... ACS nano 10 (7), 6853-6860, 2016 | 232 | 2016 |
| Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice B Pradhan, S Das, J Li, F Chowdhury, J Cherusseri, D Pandey, D Dev, ... Science Advances 6 (7), eaay5225, 2020 | 202 | 2020 |
| Engineering light outcoupling in 2D materials DH Lien, JS Kang, M Amani, K Chen, M Tosun, HP Wang, T Roy, ... Nano letters 15 (2), 1356-1361, 2015 | 177 | 2015 |
| Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ... Journal of Applied Physics 109 (3), 034501, 2011 | 154 | 2011 |
| Process dependence of proton-induced degradation in GaN HEMTs T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ... IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010 | 105 | 2010 |
| A leaf-inspired photon management scheme using optically tuned bilayer nanoparticles for ultra-thin and highly efficient photovoltaic devices S Das, MJ Hossain, SF Leung, A Lenox, Y Jung, K Davis, JH He, T Roy Nano Energy 58, 47-56, 2019 | 96 | 2019 |
| Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011 | 91 | 2011 |
| Artificial Neuron using Vertical MoS 2/Graphene Threshold Switching Memristors H Kalita, A Krishnaprasad, N Choudhary, S Das, D Dev, Y Ding, L Tetard, ... Scientific reports 9 (1), 1-8, 2019 | 86 | 2019 |
| Novel mesoporous electrode materials for symmetric, asymmetric and hybrid supercapacitors J Cherusseri, KS Kumar, N Choudhary, N Nagaiah, Y Jung, T Roy, ... Nanotechnology 30 (20), 202001, 2019 | 84 | 2019 |
| 2D MoS2-Based Threshold Switching Memristor for Artificial Neuron D Dev, A Krishnaprasad, MS Shawkat, Z He, S Das, D Fan, HS Chung, ... IEEE Electron Device Letters 41 (6), 936-939, 2020 | 76 | 2020 |
| Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions T Roy, L Liu, S de la Barrera, B Chakrabarti, ZR Hesabi, CA Joiner, ... Applied Physics Letters 104 (12), 123506, 2014 | 67 | 2014 |
| Optoelectronic synapse using monolayer MoS 2 field effect transistors MM Islam, D Dev, A Krishnaprasad, L Tetard, T Roy Scientific reports 10 (1), 1-9, 2020 | 65 | 2020 |
| Single event mechanisms in 90 nm triple-well CMOS devices T Roy, AF Witulski, RD Schrimpf, ML Alles, LW Massengill IEEE Transactions on Nuclear Science 55 (6), 2948-2956, 2008 | 64 | 2008 |
| Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ... Applied Physics Letters 99 (20), 203501, 2011 | 62 | 2011 |
| Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defect Engineering MS Shawkat, J Gil, SS Han, TJ Ko, M Wang, D Dev, J Kwon, GH Lee, ... ACS Applied Materials & Interfaces 12 (12), 14341-14351, 2020 | 59 | 2020 |
| Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions T Roy, YS Puzyrev, BR Tuttle, DM Fleetwood, RD Schrimpf, DF Brown, ... Applied Physics Letters 96 (13), 133503, 2010 | 59 | 2010 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
