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Fabien Guillot
Fabien Guillot
ANR
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Systematic experimental and theoretical investigation of intersubband absorption in Ga N∕ Al N quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B 73 (12), 125347, 2006
3152006
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
2362008
Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures
A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ...
Applied Physics Letters 92 (1), 2008
1672008
GaN/AlGaN intersubband optoelectronic devices
H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ...
New Journal of Physics 11 (12), 125023, 2009
1192009
Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ...
Journal of applied physics 100 (4), 2006
1092006
Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength
A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ...
Applied physics letters 88 (14), 2006
972006
High-quality AlN∕ GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors
D Hofstetter, E Baumann, FR Giorgetta, M Graf, M Maier, F Guillot, ...
Applied physics letters 88 (12), 2006
902006
Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature
L Nevou, M Tchernycheva, FH Julien, F Guillot, E Monroy
Applied physics letters 90 (12), 2007
792007
Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells
L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ...
Applied physics letters 90 (22), 2007
742007
High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm
A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ...
Applied Physics Letters 93 (19), 2008
732008
Electron confinement in strongly coupled GaN∕ AlN quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, F Guillot, E Monroy, ...
Applied physics letters 88 (15), 2006
672006
GaN-based quantum dot infrared photodetector operating at 1.38 µm
L Doyennette, L Nevou, M Tchernycheva, A Lupu, F Guillot, E Monroy, ...
Electronics Letters 41 (19), 1, 2005
602005
Electrically adjustable intersubband absorption of a GaN∕ AlN superlattice grown on a transistorlike structure
E Baumann, FR Giorgetta, D Hofstetter, S Leconte, F Guillot, ...
Applied physics letters 89 (10), 2006
572006
Optically nonlinear effects in intersubband transitions of GaN∕ AlN-based superlattice structures
D Hofstetter, E Baumann, FR Giorgetta, F Guillot, S Leconte, E Monroy
Applied Physics Letters 91 (13), 2007
542007
Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths
M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ...
Applied Physics Letters 87 (10), 2005
522005
Electrooptical modulator at telecommunication wavelengths based on GaN–AlN coupled quantum wells
N Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ...
IEEE Photonics Technology Letters 20 (9), 724-726, 2008
482008
Intersubband resonant enhancement of second-harmonic generation in GaN∕ AlN quantum wells
L Nevou, M Tchernycheva, F Julien, M Raybaut, A Godard, E Rosencher, ...
Applied physics letters 89 (15), 2006
482006
High frequency (f¼2. 37 GHz) room temperature operation of 1.55lm AlN/GaN-based intersubband detector
FR Giorgetta, E Baumann, F Guillot, E Monroy, D Hofstetter
simulation 104, 103, 2007
462007
Intersubband transition-based processes and devices in AlN/GaN-based heterostructures
D Hofstetter, E Baumann, FR Giorgetta, R Théron, H Wu, WJ Schaff, ...
Proceedings of the IEEE 98 (7), 1234-1248, 2010
422010
Room-temperature intersubband emission of GaN/AlN quantum wells at λ= 2.3 µm
L Nevou, FH Julien, R Colombelli, F Guillot, E Monroy
Electronics Letters 42 (22), 1308-1309, 2006
412006
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Artikelen 1–20