Max C. Lemme
Max C. Lemme
Professor, RWTH Aachen University, Germany, Director, AMO GmbH
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A graphene field-effect device
MC Lemme, TJ Echtermeyer, M Baus, H Kurz
IEEE Electron Device Letters 28 (4), 282-284, 2007
Gate-activated photoresponse in a graphene p–n junction
MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ...
Nano Letters 11 (10), 4134-4137, 2011
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ...
Physical review letters 102 (7), 076102, 2009
Efficient inkjet printing of graphene
J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling
Advanced Materials 25 (29), 3985-3992, 2013
Precision cutting and patterning of graphene with helium ions
DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus
Nanotechnology 20 (45), 455301, 2009
Etching of graphene devices with a helium ion beam
MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ...
ACS Nano 3 (9), 2674-2676, 2009
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano Letters 13 (7), 3237-3242, 2013
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS Nano 9 (5), 4776–4785, 2015
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano Letters 13 (4), 1435-1439, 2013
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature
C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ...
ACS Nano 10 (10), 9550–9558, 2016
Resistive graphene humidity sensors with rapid and direct electrical readout
AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ...
Nanoscale 7 (45), 19099-19109, 2015
Non-volatile switching in graphene field effect devices
TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz
IEEE Electron Device Letters 29 (8), 952-954, 2008
Inkjet Printing of MoS2
J Li, MM Naiini, S Vaziri, MC Lemme, M Östling
Advanced Functional Materials 24 (41), 6524-6531, 2014
Vertical graphene base transistor
W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
Graphene-enabled wireless communication for massive multicore architectures
S Abadal, E Alarcón, A Cabellos-Aparicio, MC Lemme, M Nemirovsky
IEEE Communications Magazine 51 (11), 137-143, 2013
Mobility in graphene double gate field effect transistors
MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide
T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ...
Nano Letters 10 (2), 461-465, 2010
Current status of graphene transistors
MC Lemme
Solid State Phenomena 156, 499-509, 2010
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