| Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999 | 3764 | 1999 |
| Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000 | 2147 | 2000 |
| Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997 | 802 | 1997 |
| Undoped AlGaN/GaN HEMTs for microwave power amplification LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ... IEEE Transactions on Electron Devices 48 (3), 479-485, 2001 | 468 | 2001 |
| Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 387 | 1996 |
| Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997 | 302 | 1997 |
| Playing with polarity M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ... physica status solidi (b) 228 (2), 505-512, 2001 | 290 | 2001 |
| Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann Applied physics letters 68 (7), 970-972, 1996 | 287 | 1996 |
| Optical patterning of GaN films MK Kelly, O Ambacher, B Dahlheimer, G Groos, R Dimitrov, H Angerer, ... Applied physics letters 69 (12), 1749-1751, 1996 | 270 | 1996 |
| Method of separating two layers of material from one another and electronic components produced using this process M Kelly, O Ambacher, M Stutzmann, M Brandt, R Dimitrov, R Handschuh US Patent 6,559,075, 2003 | 255 | 2003 |
| Electron affinity of surfaces SP Grabowski, M Schneider, H Nienhaus, W Mönch, R Dimitrov, ... Applied Physics Letters 78 (17), 2503-2505, 2001 | 249 | 2001 |
| Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on … R Dimitrov, M Murphy, J Smart, W Schaff, JR Shealy, LF Eastman, ... Journal of Applied Physics 87 (7), 3375-3380, 2000 | 247 | 2000 |
| Role of spontaneous and piezoelectric polarization induced effects in Group‐III nitride based heterostructures and devices O Ambacher, R Dimitrov, M Stutzmann, BE Foutz, MJ Murphy, JA Smart, ... physica status solidi (b) 216 (1), 381-389, 1999 | 206 | 1999 |
| -behavior of Si in AlN R Zeisel, MW Bayerl, STB Goennenwein, R Dimitrov, O Ambacher, ... Physical review B 61 (24), R16283, 2000 | 173 | 2000 |
| Defect-related optical transitions in GaN W Rieger, R Dimitrov, D Brunner, E Rohrer, O Ambacher, M Stutzmann Physical Review B 54 (24), 17596, 1996 | 118 | 1996 |
| Method of separating two layers of material from one another M Kelly, O Ambacher, M Stutzmann, M Brandt, R Dimitrov, R Handschuh US Patent 6,740,604, 2004 | 111 | 2004 |
| Negative electron affinity of cesiated surfaces M Eyckeler, W Mönch, TU Kampen, R Dimitrov, O Ambacher, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 92 | 1998 |
| Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures PJ Schuck, MD Mason, RD Grober, O Ambacher, AP Lima, C Miskys, ... Applied Physics Letters 79 (7), 952-954, 2001 | 86 | 2001 |
| Structural properties of AlGaN/GaN heterostructures on Si (111) substrates suitable for high-electron mobility transistors S Kaiser, M Jakob, J Zweck, W Gebhardt, O Ambacher, R Dimitrov, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 79 | 2000 |
| Properties and applications of MBE grown AlGaN M Stutzmann, O Ambacher, A Cros, MS Brandt, H Angerer, R Dimitrov, ... Materials Science and Engineering: B 50 (1-3), 212-218, 1997 | 74 | 1997 |
