The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons KA Ritter, JW Lyding Nature materials 8 (3), 235-242, 2009 | 1236 | 2009 |
Atomic-scale desorption through electronic and vibrational excitation mechanisms TC Shen, C Wang, GC Abeln, JR Tucker, JW Lyding, P Avouris, ... Science 268 (5217), 1590-1592, 1995 | 875 | 1995 |
Nanoscale patterning and oxidation of H‐passivated Si (100)‐2× 1 surfaces with an ultrahigh vacuum scanning tunneling microscope JW Lyding, TC Shen, JS Hubacek, JR Tucker, GC Abeln Applied physics letters 64 (15), 2010-2012, 1994 | 620 | 1994 |
Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition JD Wood, SW Schmucker, AS Lyons, E Pop, JW Lyding Nano letters 11 (11), 4547-4554, 2011 | 474 | 2011 |
Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing JW Lyding, K Hess, IC Kizilyalli Applied Physics Letters 68 (18), 2526-2528, 1996 | 404 | 1996 |
Silicon-based molecular nanotechnology MC Hersam, NP Guisinger, JW Lyding Nanotechnology 11 (2), 70, 2000 | 271 | 2000 |
Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si (100) ET Foley, AF Kam, JW Lyding, P Avouris Physical review letters 80 (6), 1336, 1998 | 252 | 1998 |
Cofacial assembly of partially oxidized metallamacrocycles as an approach to controlling lattice architecture in low-dimensional molecular solids. Chemical, structural … BN Diel, T Inabe, JW Lyding, KF Schoch Jr, CR Kannewurf, TJ Marks Journal of the American Chemical Society 105 (6), 1551-1567, 1983 | 225 | 1983 |
Breaking individual chemical bonds via STM-induced excitations P Avouris, RE Walkup, AR Rossi, HC Akpati, P Nordlander, TC Shen, ... Surface science 363 (1-3), 368-377, 1996 | 204 | 1996 |
STM-induced H atom desorption from Si (100): isotope effects and site selectivity P Avouris, RE Walkup, AR Rossi, TC Shen, GC Abeln, JR Tucker, ... Chemical Physics Letters 257 (1-2), 148-154, 1996 | 184 | 1996 |
Giant isotope effect in hot electron degradation of metal oxide silicon devices K Hess, IC Kizilyalli, JW Lyding IEEE Transactions on Electron Devices 45 (2), 406-416, 1998 | 180 | 1998 |
Atomic-scale evidence for potential barriers and strong carrier scattering at graphene grain boundaries: a scanning tunneling microscopy study JC Koepke, JD Wood, D Estrada, ZY Ong, KT He, E Pop, JW Lyding ACS nano 7 (1), 75-86, 2013 | 167 | 2013 |
Brockenbrough, R; and Gammie, G; Variable-temperature scanning tunneling microscope: Rev JW Lyding, S Skala, JS Hubacek Sci. Instrum., Sep 59 (9), 1897-1902, 1988 | 155 | 1988 |
Structure of GaAs(100)-c(8×2) determined by scanning tunneling microscopy SL Skala, JS Hubacek, JR Tucker, JW Lyding, ST Chou, KY Cheng Physical Review B 48 (12), 9138, 1993 | 125 | 1993 |
Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability IC Kizilyalli, JW Lyding, K Hess IEEE Electron Device Letters 18 (3), 81-83, 1997 | 122 | 1997 |
Computer automated charge transport measurement system JW Lyding, HO Marcy, TJ Marks, CR Kannewurf IEEE transactions on instrumentation and measurement 37 (1), 76-80, 1988 | 122 | 1988 |
Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si (100) surfaces PM Albrecht, JW Lyding Applied Physics Letters 83 (24), 5029-5031, 2003 | 120 | 2003 |
Scanning tunneling microscopy study and nanomanipulation of graphene-coated water on mica KT He, JD Wood, GP Doidge, E Pop, JW Lyding Nano letters 12 (6), 2665-2672, 2012 | 111 | 2012 |
Annealing free, clean graphene transfer using alternative polymer scaffolds JD Wood, GP Doidge, EA Carrion, JC Koepke, JA Kaitz, I Datye, ... Nanotechnology 26 (5), 055302, 2015 | 107 | 2015 |
On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing Z Chen, K Hess, J Lee, JW Lyding, E Rosenbaum, I Kizilyalli, S Chetlur, ... IEEE Electron Device Letters 21 (1), 24-26, 2000 | 106 | 2000 |