James R. Shealy
James R. Shealy
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
BM Green, KK Chu, EM Chumbes, JA Smart, JR Shealy, LF Eastman
IEEE Electron Device Letters 21 (6), 268-270, 2000
Undoped AlGaN/GaN HEMTs for microwave power amplification
LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
H Kim, RM Thompson, V Tilak, TR Prunty, JR Shealy, LF Eastman
IEEE Electron device letters 24 (7), 421-423, 2003
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on …
R Dimitrov, M Murphy, J Smart, W Schaff, JR Shealy, LF Eastman, ...
Journal of Applied Physics 87 (7), 3375-3380, 2000
Role of spontaneous and piezoelectric polarization induced effects in Group‐III nitride based heterostructures and devices
O Ambacher, R Dimitrov, M Stutzmann, BE Foutz, MJ Murphy, JA Smart, ...
physica status solidi (b) 216 (1), 381-389, 1999
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
V Tilak, B Green, V Kaper, H Kim, T Prunty, J Smart, J Shealy, L Eastman
IEEE Electron Device Letters 22 (11), 504-506, 2001
AlGaN/GaN high electron mobility transistors on Si (111) substrates
EM Chumbes, AT Schremer, JA Smart, Y Wang, NC MacDonald, D Hogue, ...
IEEE Transactions on electron devices 48 (3), 420-426, 2001
Hot-phonon temperature and lifetime in a biased Al x Ga 1− x N/G a N channel estimated from noise analysis
A Matulionis, J Liberis, I Matulionienė, M Ramonas, LF Eastman, ...
Physical Review B 68 (3), 035338, 2003
An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
JR Shealy, V Kaper, V Tilak, T Prunty, JA Smart, B Green, LF Eastman
Journal of Physics: Condensed Matter 14 (13), 3499, 2002
Highly oriented zinc oxide films grown by the oxidation of diethylzinc
SK Ghandhi, RJ Field, JR Shealy
Applied Physics Letters 37 (5), 449-451, 1980
Electron drift velocity in AlGaN/GaN channel at high electric fields
L Ardaravičius, A Matulionis, J Liberis, O Kiprijanovic, M Ramonas, ...
Applied Physics Letters 83 (19), 4038-4040, 2003
miR-1269 promotes metastasis and forms a positive feedback loop with TGF-β
P Bu, L Wang, KY Chen, N Rakhilin, J Sun, A Closa, KL Tung, S King, ...
Nature communications 6 (1), 6879, 2015
High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates
BM Green, V Tilak, S Lee, H Kim, JA Smart, KJ Webb, JR Shealy, ...
IEEE Transactions on Microwave Theory and Techniques 49 (12), 2486-2493, 2001
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
JA Smart, AT Schremer, NG Weimann, O Ambacher, LF Eastman, ...
Applied physics letters 75 (3), 388-390, 1999
Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
EM Chumbes, JA Smart, T Prunty, JR Shealy
IEEE Transactions on Electron Devices 48 (3), 416-419, 2001
Growth and passivation of AlGaN/GaN heterostructures
JR Shealy, TR Prunty, EM Chumbes, BK Ridley
Journal of Crystal Growth 250 (1-2), 7-13, 2003
Field effect semiconductor device having dipole barrier
LF Eastman, JR Shealy
US Patent 6,150,680, 2000
High electron mobility AlGaN/GaN heterostructure on (111) Si
AT Schremer, JA Smart, Y Wang, O Ambacher, NC MacDonald, ...
Applied Physics Letters 76 (6), 736-738, 2000
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