| Investigation of GaN-on-GaN vertical pn diode with regrown p-GaN by metalorganic chemical vapor deposition K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ... Applied Physics Letters 113 (23), 2018 | 65 | 2018 |
| High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ... IEEE Electron Device Letters 41 (1), 127-130, 2019 | 62 | 2019 |
| Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing H Fu, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, J Montes, TH Yang, ... Applied Physics Express 12 (5), 051015, 2019 | 37 | 2019 |
| Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics H Liu, H Fu, K Fu, SR Alugubelli, PY Su, Y Zhao, FA Ponce Applied Physics Letters 114 (8), 2019 | 34 | 2019 |
| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 25 | 2021 |
| Dopant profiling in pin GaN structures using secondary electrons SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, FA Ponce Journal of Applied Physics 126 (1), 2019 | 25 | 2019 |
| Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing m-plane GaN substrates H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ... Applied Physics Express 11 (11), 111003, 2018 | 25 | 2018 |
| Lateral current spreading in III-N ultraviolet vertical-cavity surface-emitting lasers using modulation-doped short period superlattices K Mehta, YS Liu, J Wang, H Jeong, T Detchprohm, YJ Park, SR Alugubelli, ... IEEE Journal of Quantum Electronics 54 (4), 1-7, 2018 | 22 | 2018 |
| Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN pin diodes SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, MR McCartney, FA Ponce Applied Physics Letters 115 (20), 2019 | 17 | 2019 |
| Theory and design of electron blocking layers for III-N-based laser diodes by numerical simulation K Mehta, YS Liu, J Wang, H Jeong, T Detchprohm, YJ Park, SR Alugubelli, ... IEEE Journal of Quantum Electronics 54 (6), 1-11, 2018 | 17 | 2018 |
| High reflectivity hybrid AlGaN/Silver distributed bragg reflectors for use in the UV-visible spectrum K Mehta, T Detchprohm, YJ Park, YS Liu, O Moreno, SR Alugubelli, ... IEEE Journal of Quantum Electronics 53 (6), 1-8, 2017 | 9 | 2017 |
| GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications K Fu, S Luo, H Fu, K Hatch, SR Alugubelli, H Liu, T Li, M Xu, Z Mei, Z He, ... IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Demonstration of nonpolar m-plane vertical GaN-on-GaN pn power diodes grown on free-standing GaN substrates H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ... arXiv preprint arXiv:1806.05308, 2018 | 1 | 2018 |
| Nonpolar vertical GaN-on-GaN pn diodes grown on free-standing (10 (1) over-bar0) m-plane GaN H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ... | 1 | 2018 |
| 1.2 kV regrown GaN vertical pn power diodes with ultra low leakage using advanced materials engineering K Fu, H Fu, H Liu, SR Alugubelli, X Huang, H Chen, TH Yang, J Montes, ... 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |
| Corrections to “Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices”[Aug 18 Art. no. 2400507] K Mehta, YS Liu, J Wang, H Jeong, T Detchprohm, YJ Park, SR Alugubelli, ... IEEE Journal of Quantum Electronics 55 (3), 1-1, 2019 | | 2019 |
| Nanoscale Electronic Properties in GaN Based Structures for Power Electronics Using Electron Microscopy SR Alugubelli Arizona State University, 2019 | | 2019 |
| Solid State Lasers Characterisation and Modelling of a Passively Q-Switched Yb: CaF2 Laser.... TR Schoepp, HF Tiedje, and R. Fedosejevs 1700308 Semiconductor Lasers An Accurate … DB Reflectors, P Witonski, A Mossakowska-Wyszynska, P Szczepanski, ... | | |
